SSM3K59CTB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM3K59CTB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 26 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.215 Ohm
Paquete / Cubierta: CST3B
Búsqueda de reemplazo de SSM3K59CTB MOSFET
SSM3K59CTB Datasheet (PDF)
ssm3k59ctb.pdf
SSM3K59CTBMOSFETs Silicon N-Channel MOSSSM3K59CTBSSM3K59CTBSSM3K59CTBSSM3K59CTB1. Applications1. Applications1. Applications1. Applications DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 250 m (typ.) (@VGS = 1.8 V, ID = 0.2 A) RDS(ON) = 210 m (typ.) (@VGS = 2.5 V,
ssm3k56mfv.pdf
SSM3K56MFVMOSFETs Silicon N-Channel MOSSSM3K56MFVSSM3K56MFVSSM3K56MFVSSM3K56MFV1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON)
ssm3k56fs.pdf
SSM3K56FSMOSFETs Silicon N-Channel MOSSSM3K56FSSSM3K56FSSSM3K56FSSSM3K56FS1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON) = 48
ssm3k56act.pdf
SSM3K56ACTMOSFETs Silicon N-Channel MOSSSM3K56ACTSSM3K56ACTSSM3K56ACTSSM3K56ACT1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON)
Otros transistores... SSM3K335R , SSM3K336R , SSM3K337R , SSM3K339R , SSM3K35CTC , SSM3K56CT , SSM3K56FS , SSM3K56MFV , AO4407A , SSM3K72CTC , SSM40P03GH , SSM40P03GJ , SSM40T03GH , SSM40T03GJ , SSM40T03GP , SSM40T03GS , SSM4224M .
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