All MOSFET. SSM3K59CTB Datasheet

 

SSM3K59CTB Datasheet and Replacement


   Type Designator: SSM3K59CTB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.215 Ohm
   Package: CST3B
 

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SSM3K59CTB Datasheet (PDF)

 ..1. Size:222K  toshiba
 ssm3k59ctb.pdf pdf_icon

SSM3K59CTB

SSM3K59CTBMOSFETs Silicon N-Channel MOSSSM3K59CTBSSM3K59CTBSSM3K59CTBSSM3K59CTB1. Applications1. Applications1. Applications1. Applications DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 250 m (typ.) (@VGS = 1.8 V, ID = 0.2 A) RDS(ON) = 210 m (typ.) (@VGS = 2.5 V,

 8.1. Size:197K  toshiba
 ssm3k56mfv.pdf pdf_icon

SSM3K59CTB

SSM3K56MFVMOSFETs Silicon N-Channel MOSSSM3K56MFVSSM3K56MFVSSM3K56MFVSSM3K56MFV1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON)

 8.2. Size:198K  toshiba
 ssm3k56fs.pdf pdf_icon

SSM3K59CTB

SSM3K56FSMOSFETs Silicon N-Channel MOSSSM3K56FSSSM3K56FSSSM3K56FSSSM3K56FS1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON) = 48

 8.3. Size:208K  toshiba
 ssm3k56act.pdf pdf_icon

SSM3K59CTB

SSM3K56ACTMOSFETs Silicon N-Channel MOSSSM3K56ACTSSM3K56ACTSSM3K56ACTSSM3K56ACT1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON)

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Datasheet: SSM3K335R , SSM3K336R , SSM3K337R , SSM3K339R , SSM3K35CTC , SSM3K56CT , SSM3K56FS , SSM3K56MFV , BS170 , SSM3K72CTC , SSM40P03GH , SSM40P03GJ , SSM40T03GH , SSM40T03GJ , SSM40T03GP , SSM40T03GS , SSM4224M .

History: SI3460DV-T1 | HGB028N08A | SIA918EDJ | G48N03D3 | LSGG04R029 | NVD5890NL | AP01L60T-H-HF

Keywords - SSM3K59CTB MOSFET datasheet

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