SSM40T03GS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM40T03GS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 8.8 nC
   trⓘ - Tiempo de subida: 62 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO-263

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SSM40T03GS Datasheet (PDF)

..1. Size:375K silicon standard
ssm40t03gp ssm40t03gs.pdf

SSM40T03GP,SN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 30VDSimple drive requirement RDS(ON) 25mFast switching ID 28AGPb-free, RoHS compliant.SDESCRIPTIONGThe SSM40T03GS is in a TO-263 package, which is widely used forDScommercial and industrial surface-mount applications. This device is TO-263 (S)suitable for low-voltage applications such as DC

5.1. Size:295K silicon standard
ssm40t03gh ssm40t03gj.pdf

SSM40T03GH,JN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 30VDSimple drive requirement R 25mDS(ON)Fast switching ID 28AGPb-free; RoHS compliant.SDESCRIPTIONGThe SSM40T03GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC

9.1. Size:281K silicon standard
ssm40p03gh ssm40p03gj.pdf

SSM40P03GH,JP-CHANNEL ENHANCEMENT-MODE POWER MOSFETDLow gate-charge BV -30VDSSSimple drive requirement R 28mDS(ON)GFast switching ID -30ASDescriptionGThe SSM40P03H is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The throug

9.2. Size:125K silicon standard
ssm40n03p.pdf

SSM40N03PN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate charge BVDSS 30VSimple drive requirement R 17mDS(ON)Fast switching ID 40AGDS TO-220DescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.SThe TO-220 package is widely preferred fo

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