SSM40T03GS datasheet, аналоги, основные параметры
Наименование производителя: SSM40T03GS 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 31 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 62 ns
Cossⓘ - Выходная емкость: 145 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: TO-263
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Аналог (замена) для SSM40T03GS
- подборⓘ MOSFET транзистора по параметрам
SSM40T03GS даташит
ssm40t03gp ssm40t03gs.pdf
SSM40T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 30V D Simple drive requirement RDS(ON) 25m Fast switching ID 28A G Pb-free, RoHS compliant. S DESCRIPTION G The SSM40T03GS is in a TO-263 package, which is widely used for D S commercial and industrial surface-mount applications. This device is TO-263 (S) suitable for low-voltage applications such as DC
ssm40t03gh ssm40t03gj.pdf
SSM40T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 30V D Simple drive requirement R 25m DS(ON) Fast switching ID 28A G Pb-free; RoHS compliant. S DESCRIPTION G The SSM40T03GH is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC
ssm40p03gh ssm40p03gj.pdf
SSM40P03GH,J P-CHANNEL ENHANCEMENT-MODE POWER MOSFET D Low gate-charge BV -30V DSS Simple drive requirement R 28m DS(ON) G Fast switching ID -30A S Description G The SSM40P03H is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The throug
ssm40n03p.pdf
SSM40N03P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate charge BVDSS 30V Simple drive requirement R 17m DS(ON) Fast switching ID 40A G D S TO-220 Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220 package is widely preferred fo
Другие IGBT... SSM3K56MFV, SSM3K59CTB, SSM3K72CTC, SSM40P03GH, SSM40P03GJ, SSM40T03GH, SSM40T03GJ, SSM40T03GP, IRF740, SSM4224M, SSM4226GM, SSM4228GM, SSM4232GM, SSM4407GM, SSM4409GEM, SSM4410M, SSM4423GM
History: DHE16N06
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