SSM4232GM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM4232GM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: SO-8

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SSM4232GM datasheet

 ..1. Size:201K  silicon standard
 ssm4232gm.pdf pdf_icon

SSM4232GM

SSM4232GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 BVDSS 30V D2 Low On-Resistance D1 D1 RDS(ON) 22m Simple Drive Requirement ID 7.8A G2 Dual N MOSFET Package S2 G1 SO-8 S1 DESCRIPTION D2 D1 The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast G2 switching, ruggedized device design, ultra

 9.1. Size:133K  silicon standard
 ssm4224m.pdf pdf_icon

SSM4232GM

SSM4224M DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BVDSS 30V D2 D2 Simple drive requirement R 14m DS(ON) D1 D1 Dual N-MOSFET package ID 10A G2 S2 G1 SO-8 S1 Description Advanced power MOSFETs from Silicon Standard provide the D2 D1 designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effecti

 9.2. Size:155K  silicon standard
 ssm4228gm.pdf pdf_icon

SSM4232GM

SSM4228M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance BVDSS 30V D2 D2 High Vgs rating D1 RDS(ON) 25m D1 Surface-mount package ID 6.8A G2 S2 G1 SO-8 S1 Description D2 D1 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 G1 ruggedized device design, ultra low on-resistance and cost-effectiveness.

 9.3. Size:142K  silicon standard
 ssm4226gm.pdf pdf_icon

SSM4232GM

SSM4226M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BVDSS 30V D2 D2 D1 Simple drive requirement R 18m DS(ON) D1 High V rating ID 8.2A GS G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 G1 ruggedized device design, ultra low on-resistance and cost

MOSTRAR MÁS

Otros transistores... SSM40P03GJ, SSM40T03GH, SSM40T03GJ, SSM40T03GP, SSM40T03GS, SSM4224M, SSM4226GM, SSM4228GM, IRF540, SSM4407GM, SSM4409GEM, SSM4410M, SSM4423GM, SSM4424GM, SSM4426GM, SSM4435M, SSM4500GM