SSM4232GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM4232GM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 230 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de SSM4232GM MOSFET
SSM4232GM Datasheet (PDF)
ssm4232gm.pdf

SSM4232GMN-CHANNEL ENHANCEMENT MODE POWER MOSFETPRODUCT SUMMARY D2BVDSS 30VD2Low On-Resistance D1D1 RDS(ON) 22mSimple Drive Requirement ID 7.8AG2Dual N MOSFET Package S2G1SO-8S1DESCRIPTION D2D1The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast G2switching, ruggedized device design, ultra
ssm4224m.pdf

SSM4224MDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BVDSS 30VD2D2Simple drive requirement R 14mDS(ON)D1D1Dual N-MOSFET package ID 10AG2S2G1SO-8S1DescriptionAdvanced power MOSFETs from Silicon Standard provide theD2D1designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effecti
ssm4228gm.pdf

SSM4228M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSLow on-resistance BVDSS 30VD2D2High Vgs rating D1 RDS(ON) 25mD1Surface-mount package ID 6.8AG2S2G1SO-8S1DescriptionD2D1Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2G1ruggedized device design, ultra low on-resistance andcost-effectiveness.
ssm4226gm.pdf

SSM4226M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BVDSS 30VD2D2D1Simple drive requirement R 18mDS(ON)D1High V rating ID 8.2AGSG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2G1ruggedized device design, ultra low on-resistance andcost
Otros transistores... SSM40P03GJ , SSM40T03GH , SSM40T03GJ , SSM40T03GP , SSM40T03GS , SSM4224M , SSM4226GM , SSM4228GM , IRF540N , SSM4407GM , SSM4409GEM , SSM4410M , SSM4423GM , SSM4424GM , SSM4426GM , SSM4435M , SSM4500GM .
History: 2SK2607 | RJK0351DPA | 4N70KG-TF3-T
History: 2SK2607 | RJK0351DPA | 4N70KG-TF3-T



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
2n5210 transistor | toshiba 2sc2290 | pk6d0ba mosfet | 2sd726 | c536 transistor equivalent | 2sa1294 datasheet | mp10b transistor | bc182b