SSM4232GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM4232GM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 13 nC
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SO-8

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SSM4232GM Datasheet (PDF)

..1. Size:201K silicon standard
ssm4232gm.pdf

SSM4232GMN-CHANNEL ENHANCEMENT MODE POWER MOSFETPRODUCT SUMMARY D2BVDSS 30VD2Low On-Resistance D1D1 RDS(ON) 22mSimple Drive Requirement ID 7.8AG2Dual N MOSFET Package S2G1SO-8S1DESCRIPTION D2D1The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast G2switching, ruggedized device design, ultra

9.1. Size:133K silicon standard
ssm4224m.pdf

SSM4224MDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BVDSS 30VD2D2Simple drive requirement R 14mDS(ON)D1D1Dual N-MOSFET package ID 10AG2S2G1SO-8S1DescriptionAdvanced power MOSFETs from Silicon Standard provide theD2D1designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effecti

9.2. Size:155K silicon standard
ssm4228gm.pdf

SSM4228M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSLow on-resistance BVDSS 30VD2D2High Vgs rating D1 RDS(ON) 25mD1Surface-mount package ID 6.8AG2S2G1SO-8S1DescriptionD2D1Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2G1ruggedized device design, ultra low on-resistance andcost-effectiveness.

9.3. Size:142K silicon standard
ssm4226gm.pdf

SSM4226M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BVDSS 30VD2D2D1Simple drive requirement R 18mDS(ON)D1High V rating ID 8.2AGSG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2G1ruggedized device design, ultra low on-resistance andcost

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