SSM4410M Datasheet. Equivalente

 ..1. Size:135K  silicon standard
 ssm4410m.pdf

SSM4410M N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low on-resistance BV 30V DSS D D Fast switching D RDS(ON) 13.5m D Simple drive requirement I 10A D G S S SO-8 S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is wid

 9.1. Size:183K  silicon standard
 ssm4409gem.pdf

SSM4409GEM P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D D D BVDSS -35V Simple Drive Requirement D RDS(ON) 7.5m Low On-resistance G Fast Switching Characteristic ID -14.5A S S S RoHS Compliant SO-8 DESCRIPTION D The Advanced Power MOSFETs from Silicon Standard Corp. G provide the designer with the best combination of fast switching, ruggedized devic

 9.2. Size:526K  silicon standard
 ssm4407gm.pdf

SSM4407GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM4407GM acheives fast switching performance BVDSS -30V with low gate charge without a complex drive circuit. It RDS(ON) 14m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I -10.7A D The SSM4407GM is supplied in a RoHS-compliant Pb-free; RoHS

 9.3. Size:301K  silicon standard
 ssm4424gm.pdf

SSM4424GM N-channel Enhancement-mode Power MOSFET D Simple drive requirement BVDSS 30V Lower gate charge RDS(ON) 9m G Fast switching characteristics I 13.8A D S Pb-free, RoHS compliant. DESCRIPTION D D Advanced Power MOSFETs from Silicon Standard provide the D D designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti

 9.4. Size:123K  silicon standard
 ssm4435m.pdf

SSM4435M P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BVDSS -30V D D Low on-resistance D R 20m DS(ON) D Fast switching ID -8A G S S SO-8 S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S The SO-8 package is widely

 9.5. Size:223K  silicon standard
 ssm4423gm.pdf

SSM4423GM P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BV -30V DSS D D Lower gate charge R 15m DS(ON) D D Fast switching characteristics ID -11A G S S SO-8 S Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness.

 9.6. Size:526K  silicon standard
 ssm4426gm.pdf

SSM4426GM N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM4426GM acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It RDS(ON) 6.5m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 16A D The SSM4426GM is supplied in an RoHS-compliant Pb-free; RoHS-c