Справочник MOSFET. SSM4410M

 

SSM4410M Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSM4410M
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12.4 ns
   Cossⓘ - Выходная емкость: 510 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0135 Ohm
   Тип корпуса: SO-8
     - подбор MOSFET транзистора по параметрам

 

SSM4410M Datasheet (PDF)

 ..1. Size:135K  silicon standard
ssm4410m.pdfpdf_icon

SSM4410M

SSM4410MN-CHANNEL ENHANCEMENT MODE POWER MOSFETLow on-resistance BV 30VDSSDDFast switching D RDS(ON) 13.5mD Simple drive requirement I 10ADGSSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. GSThe SO-8 package is wid

 9.1. Size:183K  silicon standard
ssm4409gem.pdfpdf_icon

SSM4410M

SSM4409GEMP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DDDBVDSS -35VSimple Drive Requirement DRDS(ON) 7.5mLow On-resistance GFast Switching Characteristic ID -14.5ASSSRoHS Compliant SO-8DESCRIPTION DThe Advanced Power MOSFETs from Silicon Standard Corp. Gprovide the designer with the best combination of fast switching, ruggedized devic

 9.2. Size:526K  silicon standard
ssm4407gm.pdfpdf_icon

SSM4410M

SSM4407GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM4407GM acheives fast switching performanceBVDSS -30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 14mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -10.7AD The SSM4407GM is supplied in a RoHS-compliantPb-free; RoHS

 9.3. Size:301K  silicon standard
ssm4424gm.pdfpdf_icon

SSM4410M

SSM4424GMN-channel Enhancement-mode Power MOSFETDSimple drive requirement BVDSS 30VLower gate charge RDS(ON) 9mGFast switching characteristics I 13.8ADSPb-free, RoHS compliant.DESCRIPTIONDDAdvanced Power MOSFETs from Silicon Standard provide theDDdesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effecti

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History: IXFC80N10 | FDW254P

 

 
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