IRLML5103 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLML5103
   Código: 1D*
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.76 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1(min) V
   Qgⓘ - Carga de la puerta: 3.4 nC
   trⓘ - Tiempo de subida: 8.2 nS
   Cossⓘ - Capacitancia de salida: 37 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET IRLML5103

IRLML5103 Datasheet (PDF)

..1. Size:107K international rectifier
irlml5103.pdf

PD - 9.1260DIRLML5103HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance P-Channel MOSFET VDSS = -30V SOT-23 Footprint Low Profile (

..2. Size:240K international rectifier
irlml5103pbf.pdf

IRLML5103PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETG 1l SOT-23 FootprintVDSS = -30Vl Low Profile (

..3. Size:246K infineon
irlml5103pbf.pdf

IRLML5103PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETG 1l SOT-23 FootprintVDSS = -30Vl Low Profile (

0.1. Size:213K international rectifier
irlml5103gpbf.pdf

PD - 96165AIRLML5103GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceG 1l P-Channel MOSFETVDSS = -30Vl SOT-23 Footprint3 Dl Low Profile (

0.2. Size:241K international rectifier
irlml2803pbf-1 irlml5103pbf-1.pdf

IRLML2803PbF-1HEXFET Power MOSFETVDS 30 VRDS(on) max G 10.25 (@V = 10V)GSQg (typical) 3.3 nC 3 DID 1.2 AS 2(@T = 25C)AMicro3Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Industr

8.1. Size:137K international rectifier
irlml5203.pdf

PD - 93967PROVISIONALIRLML5203HEXFET Power MOSFET)VDSS RDS(on) max (m) ID))) Ultra Low On-Resistance P-Channel MOSFET -30V 98@VGS = -10V -3.0A Surface Mount165@VGS = -4.5V -2.6A Available in Tape & Reel Low Gate ChargeDescriptionThese P-channel MOSFETs from International RectifierG 1utilize advanced processing techniques to achieve theextre

8.2. Size:194K international rectifier
irlml5203gpbf.pdf

PD - 96166IRLML5203GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 98@VGS = -10V -3.0Al Surface Mount165@VGS = -4.5V -2.6Al Available in Tape & Reell Low Gate Chargel Lead-Freel Halogen-FreeDescription These P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve the extremel

8.3. Size:194K international rectifier
irlml5203pbf.pdf

IRLML5203PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl P-Channel MOSFETVDSS RDS(on) max (mW) IDl Surface Mountl Available in Tape & Reel-30V 98@VGS = -10V -3.0Al Low Gate Charge165@VGS = -4.5V -2.6Al Lead-Freel RoHS Compliant, Halogen-FreeDescriptionG 1These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the ext

8.4. Size:195K international rectifier
irlml5203pbf-1.pdf

IRLML5203PbF-1HEXFET Power MOSFETVDS -30 VRDS(on) max 98G 1(@V = -10V)GSmRDS(on) max 165 3 D(@V = -4.5V)GSQg (typical) 9.5 nCS 2ID -3.0 A Micro3TM(@T = 25C)AFeatures BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Env

8.5. Size:194K infineon
irlml5203pbf.pdf

8.6. Size:122K tysemi
irlml5203pbf.pdf

Product specificationIRLML5203PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 98@VGS = -10V -3.0Al Surface Mount165@VGS = -4.5V -2.6Al Available in Tape & Reell Low Gate Chargel Lead-Freel Halogen-FreeDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve the

8.7. Size:2039K umw-ic
irlml5203.pdf

RUMWUMW IRLML5203UMW IRLML5203UMW IRLML5203SOT-23 Plastic-Encapsulate MOSFETS SOT23 IRLML5203 P-Channel 30-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX \85m@-10 V1. BASE -3.0A-30V145m@-4.5V2. EMITTER 3. COLLECTORGeneral Description The UMW IRLML5203 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suit

8.8. Size:477K huashuo
irlml5203.pdf

IRLML5203 P-Ch 30V Fast Switching MOSFETs Product Summary Description The IRLML5203 is the high cell density trenched P-VDS -30 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 43 m and efficiency for most of the small power switching and load switch applications. ID -3.2 A The IRLML5203 meet the RoHS and Green Product requirement with full function reliability

8.9. Size:1417K cn shikues
irlml5203.pdf

IRLML5203

8.10. Size:914K cn vbsemi
irlml5203trpbf.pdf

IRLML5203TRPBFwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(

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