IRLML5103 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRLML5103
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.54 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.76 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 8.2 ns
Cossⓘ - Выходная емкость: 37 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: SOT23
IRLML5103 Datasheet (PDF)
irlml5103.pdf
PD - 9.1260DIRLML5103HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance P-Channel MOSFET VDSS = -30V SOT-23 Footprint Low Profile (
irlml5103pbf.pdf
IRLML5103PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETG 1l SOT-23 FootprintVDSS = -30Vl Low Profile (
irlml5103pbf.pdf
IRLML5103PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETG 1l SOT-23 FootprintVDSS = -30Vl Low Profile (
irlml5103gpbf.pdf
PD - 96165AIRLML5103GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceG 1l P-Channel MOSFETVDSS = -30Vl SOT-23 Footprint3 Dl Low Profile (
irlml2803pbf-1 irlml5103pbf-1.pdf
IRLML2803PbF-1HEXFET Power MOSFETVDS 30 VRDS(on) max G 10.25 (@V = 10V)GSQg (typical) 3.3 nC 3 DID 1.2 AS 2(@T = 25C)AMicro3Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Industr
irlml5203.pdf
PD - 93967PROVISIONALIRLML5203HEXFET Power MOSFET)VDSS RDS(on) max (m) ID))) Ultra Low On-Resistance P-Channel MOSFET -30V 98@VGS = -10V -3.0A Surface Mount165@VGS = -4.5V -2.6A Available in Tape & Reel Low Gate ChargeDescriptionThese P-channel MOSFETs from International RectifierG 1utilize advanced processing techniques to achieve theextre
irlml5203gpbf.pdf
PD - 96166IRLML5203GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 98@VGS = -10V -3.0Al Surface Mount165@VGS = -4.5V -2.6Al Available in Tape & Reell Low Gate Chargel Lead-Freel Halogen-FreeDescription These P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve the extremel
irlml5203pbf.pdf
IRLML5203PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl P-Channel MOSFETVDSS RDS(on) max (mW) IDl Surface Mountl Available in Tape & Reel-30V 98@VGS = -10V -3.0Al Low Gate Charge165@VGS = -4.5V -2.6Al Lead-Freel RoHS Compliant, Halogen-FreeDescriptionG 1These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the ext
irlml5203pbf-1.pdf
IRLML5203PbF-1HEXFET Power MOSFETVDS -30 VRDS(on) max 98G 1(@V = -10V)GSmRDS(on) max 165 3 D(@V = -4.5V)GSQg (typical) 9.5 nCS 2ID -3.0 A Micro3TM(@T = 25C)AFeatures BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Env
irlml5203pbf.pdf
IRLML5203PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl P-Channel MOSFETVDSS RDS(on) max (mW) IDl Surface Mountl Available in Tape & Reel-30V 98@VGS = -10V -3.0Al Low Gate Charge165@VGS = -4.5V -2.6Al Lead-Freel RoHS Compliant, Halogen-FreeDescriptionG 1These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the ext
irlml5203pbf.pdf
Product specificationIRLML5203PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 98@VGS = -10V -3.0Al Surface Mount165@VGS = -4.5V -2.6Al Available in Tape & Reell Low Gate Chargel Lead-Freel Halogen-FreeDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve the
irlml5203.pdf
RUMWUMW IRLML5203UMW IRLML5203UMW IRLML5203SOT-23 Plastic-Encapsulate MOSFETS SOT23 IRLML5203 P-Channel 30-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX \85m@-10 V1. BASE -3.0A-30V145m@-4.5V2. EMITTER 3. COLLECTORGeneral Description The UMW IRLML5203 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suit
irlml5203.pdf
IRLML5203 P-Ch 30V Fast Switching MOSFETs Product Summary Description The IRLML5203 is the high cell density trenched P-VDS -30 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 43 m and efficiency for most of the small power switching and load switch applications. ID -3.2 A The IRLML5203 meet the RoHS and Green Product requirement with full function reliability
irlml5203trpbf.pdf
IRLML5203TRPBFwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(
Другие MOSFET... IRLM014A , IRLM110A , IRLM120A , IRLM210A , IRLM220A , IRLML2402 , IRLML2502 , IRLML2803 , TK10A60D , IRLML6302 , IRLML6401 , IRLML6402 , IRLMS1503 , IRLMS1902 , IRLMS2002 , IRLMS4502 , IRLMS5703 .
Список транзисторов
Обновления
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