SSM4513M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM4513M
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 6 nC
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET SSM4513M

SSM4513M Datasheet (PDF)

..1. Size:337K silicon standard
ssm4513m.pdf

SSM4513M/GMN AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement N-CH BV 35VD2 DSSD2Low on-resistance R 36mD1DS(ON)D1Fast switching performance ID 5.8AG2P-CH BVDSS -35VS2 G1SO-8 S1RDS(ON) 68mDescription ID -4.3AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer with the best combination of fast switching, rugge

9.1. Size:609K secos
ssm452.pdf

SSM452 -6 A, -30V, RDS(ON) 55m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SSM452 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. FEATURES SOT-223 Simple Drive Requirement Lower On-resistanc

9.2. Size:209K silicon standard
ssm4500gm.pdf

SSM4500GMN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 20VD2D2Simple Drive Requirement RDS(ON) 30mD1D1Low On-resistance ID 6AFast SwitchingG2P-CH BVDSS -20VS2G1SO-8S1RDS(ON) 50mDESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, rug

9.3. Size:305K silicon standard
ssm4502gm.pdf

SSM4502GMN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY D2 N-CH BVDSS 20VD2Simple Drive Requirement D1 RDS(ON) 18mD1Low Gate ChargeID 8.3AFast Switching Performance G2S2P-CH BVDSS -20VG1S1SO-8RDS(ON) 45mDESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switchin

9.4. Size:293K silicon standard
ssm4501gm.pdf

SSM4501GMN AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2Simple Drive Requirement D2RDS(ON) 28mD1Low On-resistance D1ID 7AFast Switching G2P-CH BVDSS -30VS2G1SO-8RDS(ON) 50mS1DESCRIPTION ID -5.3AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching,

9.5. Size:249K silicon standard
ssm4501gsd.pdf

SSM4501GSDN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2D2D1RDS(ON) 27mSimple Drive Requirement D1Low On-resistance ID 7AFast Switching Characteristic P-CH BVDSS -30VG2S2RDS(ON) 49mPDIP-8G1S1DESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of

9.6. Size:314K silicon standard
ssm4575m.pdf

SSM4575MCOMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement N-Ch BV 60VD2 DSSD2Low on-resistance D1 R 36mDS(ON)D1Fast switching performance I 6ADG2P-Ch BV -60VS2DSS G1SO-8 S1RDS(ON) 72mDescription ID -4.2APower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,D2D1rugge

9.7. Size:425K silicon standard
ssm4509m.pdf

SSM4509GMN- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSN-CH BVDSS 30VSimple drive requirement D2D2D2 RDS(ON) 14mLow on-resistance D1D1D1D1ID 10AFast switching characteristicG2G2P-CH BVDSS -30VS2S2 G1SO-8 S1G1RDS(ON) 20mS1 DescriptionID -8.4AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer with the best combination

9.8. Size:232K silicon standard
ssm4507gm.pdf

SSM4507GMN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2D2Simple Drive Requirement D2RDS(ON) 36mD2D1D1Low On-resistance D1D1ID 6.0AFast Switching Performance G2G2 P-CH BVDSS -30VS2G1 S2SO-8 S1 G1 RDS(ON) 72mSO-8 S1DESCRIPTION ID -4.2AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer w

9.9. Size:447K silicon standard
ssm4565m.pdf

SSM4565M/GMCOMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSN-CH BVDSS 40VSimple drive requirement D2D2D2 RDS(ON) 25mLower gate charge D1D1D1D1ID 7.6AFast switching characteristicG2G2P-CH BVDSS -40VS2S2 G1SO-8 S1G1RDS(ON) 33mS1 DescriptionID -6.5AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer with the

9.10. Size:288K silicon standard
ssm4532gm.pdf

SSM4532GMN AND P-CHANNEL ENHANCEMENT MODE POWER MOSFETPRODUCT SUMMARY N-CH BVDSS 30VD2D2Simple Drive Requirement RDS(ON) 50mD1D1Low On-resistance ID 5AFast Switching G2P-CH BVDSS -30VS2G1SO-8S1RDS(ON) 70mDESCRIPTION ID -4AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching,

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