SSM4513M Datasheet. Specs and Replacement
Type Designator: SSM4513M 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: SO-8
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SSM4513M datasheet
..1. Size:337K silicon standard
ssm4513m.pdf 
SSM4513M/GM N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-CH BV 35V D2 DSS D2 Low on-resistance R 36m D1 DS(ON) D1 Fast switching performance ID 5.8A G2 P-CH BVDSS -35V S2 G1 SO-8 S1 RDS(ON) 68m Description ID -4.3A Advanced Power MOSFETs from Silicon Standard provide the D2 D1 designer with the best combination of fast switching, rugge... See More ⇒
9.1. Size:609K secos
ssm452.pdf 
SSM452 -6 A, -30V, RDS(ON) 55m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SSM452 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. FEATURES SOT-223 Simple Drive Requirement Lower On-resistanc... See More ⇒
9.2. Size:209K silicon standard
ssm4500gm.pdf 
SSM4500GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 20V D2 D2 Simple Drive Requirement RDS(ON) 30m D1 D1 Low On-resistance ID 6A Fast Switching G2 P-CH BVDSS -20V S2 G1 SO-8 S1 RDS(ON) 50m DESCRIPTION ID -5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, rug... See More ⇒
9.3. Size:305K silicon standard
ssm4502gm.pdf 
SSM4502GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 N-CH BVDSS 20V D2 Simple Drive Requirement D1 RDS(ON) 18m D1 Low Gate Charge ID 8.3A Fast Switching Performance G2 S2 P-CH BVDSS -20V G1 S1 SO-8 RDS(ON) 45m DESCRIPTION ID -5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switchin... See More ⇒
9.4. Size:293K silicon standard
ssm4501gm.pdf 
SSM4501GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30V D2 Simple Drive Requirement D2 RDS(ON) 28m D1 Low On-resistance D1 ID 7A Fast Switching G2 P-CH BVDSS -30V S2 G1 SO-8 RDS(ON) 50m S1 DESCRIPTION ID -5.3A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ... See More ⇒
9.5. Size:249K silicon standard
ssm4501gsd.pdf 
SSM4501GSD N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30V D2 D2 D1 RDS(ON) 27m Simple Drive Requirement D1 Low On-resistance ID 7A Fast Switching Characteristic P-CH BVDSS -30V G2 S2 RDS(ON) 49m PDIP-8 G1 S1 DESCRIPTION ID -5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of ... See More ⇒
9.6. Size:314K silicon standard
ssm4575m.pdf 
SSM4575M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-Ch BV 60V D2 DSS D2 Low on-resistance D1 R 36m DS(ON) D1 Fast switching performance I 6A D G2 P-Ch BV -60V S2 DSS G1 SO-8 S1 RDS(ON) 72m Description ID -4.2A Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, D2 D1 rugge... See More ⇒
9.7. Size:425K silicon standard
ssm4509m.pdf 
SSM4509GM N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS N-CH BVDSS 30V Simple drive requirement D2 D2 D2 RDS(ON) 14m Low on-resistance D1 D1 D1 D1 ID 10A Fast switching characteristic G2 G2 P-CH BVDSS -30V S2 S2 G1 SO-8 S1G1 RDS(ON) 20m S1 Description ID -8.4A Advanced Power MOSFETs from Silicon Standard provide the D2 D1 designer with the best combination ... See More ⇒
9.8. Size:232K silicon standard
ssm4507gm.pdf 
SSM4507GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30V D2 D2 Simple Drive Requirement D2 RDS(ON) 36m D2 D1 D1 Low On-resistance D1 D1 ID 6.0A Fast Switching Performance G2 G2 P-CH BVDSS -30V S2 G1 S2 SO-8 S1 G1 RDS(ON) 72m SO-8 S1 DESCRIPTION ID -4.2A The advanced power MOSFETs from Silicon Standard Corp. provide the designer w... See More ⇒
9.9. Size:447K silicon standard
ssm4565m.pdf 
SSM4565M/GM COMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS N-CH BVDSS 40V Simple drive requirement D2 D2 D2 RDS(ON) 25m Lower gate charge D1 D1 D1 D1 ID 7.6A Fast switching characteristic G2 G2 P-CH BVDSS -40V S2 S2 G1 SO-8 S1G1 RDS(ON) 33m S1 Description ID -6.5A Advanced Power MOSFETs from Silicon Standard provide the D2 D1 designer with the ... See More ⇒
9.10. Size:288K silicon standard
ssm4532gm.pdf 
SSM4532GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 50m D1 D1 Low On-resistance ID 5A Fast Switching G2 P-CH BVDSS -30V S2 G1 SO-8 S1 RDS(ON) 70m DESCRIPTION ID -4A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ... See More ⇒
Detailed specifications: SSM4426GM, SSM4435M, SSM4500GM, SSM4501GM, SSM4501GSD, SSM4502GM, SSM4507GM, SSM4509M, AON6414A, SSM4532GM, SSM4565M, SSM4575M, SSM4800AGM, SSM4816SM, SSM4835M, SSM4880AGM, SSM4920M
Keywords - SSM4513M MOSFET specs
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