SSM4880AGM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM4880AGM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 516 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: SO-8
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SSM4880AGM Datasheet (PDF)
ssm4880agm.pdf

SSM4880AGMN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BVDSS 30VDDFast switching, planar construction D RDS(ON) 9mDSimple drive requirement ID 13AGSSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. GGSThe
ssm4800agm.pdf

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ssm4835m.pdf

SSM4835MP-CHANNEL ENHANCEMENT MODEPOWER MOSFETSimple drive requirement BVDSS -30VDDLow on-resistance D RDS(ON) 20mDFast switching ID -8AGSSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.SThe SO-8 package is widely p
ssm4816sm.pdf

SSM4816SMDUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODES1/D2Simple drive requirement MOSFET-1 BVDSS 30VS1/D2S1/D2Suitable for DC-DC Converters R 22mDS(ON)D1Fast switching performance ID 6.7AG2MOSFET-2 BV 30VS2/ADSSS2/ASO-8R 13mG1DS(ON)Description ID 11.5AAdvanced Power MOSFETs from Silicon Standard provide D1the designer with the best combination of fa
Otros transistores... SSM4509M , SSM4513M , SSM4532GM , SSM4565M , SSM4575M , SSM4800AGM , SSM4816SM , SSM4835M , 7N65 , SSM4920M , SSM4924GM , SSM4953M , SSM4955GM , SSM4957M , SSM5G02TU , SSM5G04TU , IRF9530NPBF .



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