SSM4924GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM4924GM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 9 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 255 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SO-8

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SSM4924GM Datasheet (PDF)

..1. Size:310K silicon standard
ssm4924gm.pdf

SSM4924GMDual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 20VD2D2D1Lower gate charge R RDS(ON) 35mD1Fast switching characteristicsI 6AIDG2S2Pb-free; RoHS compliant.G1SO-8S1DESCRIPTIOND2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, ruggedizeddevice desig

8.1. Size:153K silicon standard
ssm4920m.pdf

SSM4920MN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSimple Drive Requirement BV 25VDSSD2 D2Low On-resistance R 25mD1 DS(ON)D1Fast Switching I 7ADG2S2G1SO-8S1DescriptionD2D1Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and cost- G1effectiveness.S1S2

9.1. Size:228K silicon standard
ssm4957m.pdf

SSM4957(G)MDUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV -30VDSSD2D2Lower gate charge R 24mDS(ON)D1D1Fast switching characteristics ID -7.7AG2S2G1SO-8S1D2D1DescriptionAdvanced Power MOSFETs from Silicon Standard provide theG2G1designer with the best combination of fast switching,ruggedized device design, low on-resistan

9.2. Size:515K silicon standard
ssm4955gm.pdf

SSM4955GMDual P-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM4955GM acheives fast switching performanceBVDSS -20Vwith low gate charge without a complex drive circuit. ItRDS(ON) 45mis suitable for low voltage applications such as batterymanagement and general load-switching circuits.I -5.6AD The SSM4955GM is supplied in an RoHS-compliantPb-fr

9.3. Size:109K silicon standard
ssm4953m.pdf

SSM4953MP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BVDSS -30VD2D2Low on-resistance RDS(ON) 53m D1D1Fast switching I -5ADG2S2G1SO-8S1D2Description D1MOSFETs from Silicon Standard Corp. provide thedesigner with the best combination of fast switching,G2G1ruggedized device design, low on-resistance and cost-effectiveness.S2S1

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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