SSM4924GM
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM4924GM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 255
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package:
SO-8
SSM4924GM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM4924GM
Datasheet (PDF)
..1. Size:310K silicon standard
ssm4924gm.pdf
SSM4924GMDual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 20VD2D2D1Lower gate charge R RDS(ON) 35mD1Fast switching characteristicsI 6AIDG2S2Pb-free; RoHS compliant.G1SO-8S1DESCRIPTIOND2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, ruggedizeddevice desig
8.1. Size:153K silicon standard
ssm4920m.pdf
SSM4920MN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSimple Drive Requirement BV 25VDSSD2 D2Low On-resistance R 25mD1 DS(ON)D1Fast Switching I 7ADG2S2G1SO-8S1DescriptionD2D1Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and cost- G1effectiveness.S1S2
9.1. Size:228K silicon standard
ssm4957m.pdf
SSM4957(G)MDUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV -30VDSSD2D2Lower gate charge R 24mDS(ON)D1D1Fast switching characteristics ID -7.7AG2S2G1SO-8S1D2D1DescriptionAdvanced Power MOSFETs from Silicon Standard provide theG2G1designer with the best combination of fast switching,ruggedized device design, low on-resistan
9.2. Size:515K silicon standard
ssm4955gm.pdf
SSM4955GMDual P-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM4955GM acheives fast switching performanceBVDSS -20Vwith low gate charge without a complex drive circuit. ItRDS(ON) 45mis suitable for low voltage applications such as batterymanagement and general load-switching circuits.I -5.6AD The SSM4955GM is supplied in an RoHS-compliantPb-fr
9.3. Size:109K silicon standard
ssm4953m.pdf
SSM4953MP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BVDSS -30VD2D2Low on-resistance RDS(ON) 53m D1D1Fast switching I -5ADG2S2G1SO-8S1D2Description D1MOSFETs from Silicon Standard Corp. provide thedesigner with the best combination of fast switching,G2G1ruggedized device design, low on-resistance and cost-effectiveness.S2S1
Datasheet: WPB4002
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