IRF9530NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF9530NPBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 79 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 14 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 58 nC
Tiempo de subida (tr): 58 nS
Conductancia de drenaje-sustrato (Cd): 260 pF
Resistencia entre drenaje y fuente RDS(on): 0.2 Ohm
Paquete / Cubierta: TO-220AB
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IRF9530NPBF Datasheet (PDF)
irf9530npbf.pdf
IRF9530NPbF l Advanced Process TechnologyDl Dynamic dv/dt Rating DSS l 175C Operating Temperaturel Fast Switching DS(on) l P-ChannelGl Fully Avalanche Rated D l Lead-FreeSDescription
irf9530npbf.pdf
IRF9530NPbF l Advanced Process TechnologyDl Dynamic dv/dt Rating DSS l 175C Operating Temperaturel Fast Switching DS(on) l P-ChannelGl Fully Avalanche Rated D l Lead-FreeSDescription
irf9530npbf.pdf
IRF9530NPBFwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.167 at VGS = - 10 V- 18- 100 37 100 % Rg and UIS Tested0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Power Swi
irf9530ns.pdf
PD - 91523AIRF9530NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9530NS)VDSS = -100V Low-profile through-hole (IRF9530NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG P-ChannelID = -14A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi
irf9530n.pdf
PD - 91482CIRF9530NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 P-ChannelG Fully Avalanche RatedID = -14ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are
irf9530nspbf.pdf
PD- 95439IRF9530NSPbFIRF9530NLPbF Lead-Freewww.irf.com 104/26/05IRF9530NS/LPbF2 www.irf.comIRF9530NS/LPbFwww.irf.com 3IRF9530NS/LPbF4 www.irf.comIRF9530NS/LPbFwww.irf.com 5IRF9530NS/LPbF6 www.irf.comIRF9530NS/LPbFwww.irf.com 7IRF9530NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
irf9530nspbf irf9530nlpbf.pdf
IRF9530NSPbF IRF9530NLPbF Benefits HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) VDSS -100V Low-profile through-hole(IRF9530NL) 175C Operating Temperature RDS(on) 0.20 Fast Switching ID -14A P-Channel Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFET Power MOSFETs from In
irf9530n.pdf
isc P-Channel MOSFET Transistor IRF9530N,IIRF9530NFEATURESStatic drain-source on-resistance:RDS(on)0.2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andrelia
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