All MOSFET. IRF9530NPBF Datasheet

 

IRF9530NPBF Datasheet and Replacement


   Type Designator: IRF9530NPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 58 nC
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-220AB
 

 IRF9530NPBF substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRF9530NPBF Datasheet (PDF)

 ..1. Size:225K  international rectifier
irf9530npbf.pdf pdf_icon

IRF9530NPBF

IRF9530NPbF l Advanced Process TechnologyDl Dynamic dv/dt Rating DSS l 175C Operating Temperaturel Fast Switching DS(on) l P-ChannelGl Fully Avalanche Rated D l Lead-FreeSDescription

 ..2. Size:1531K  cn vbsemi
irf9530npbf.pdf pdf_icon

IRF9530NPBF

IRF9530NPBFwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.167 at VGS = - 10 V- 18- 100 37 100 % Rg and UIS Tested0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Power Swi

 6.1. Size:173K  international rectifier
irf9530ns.pdf pdf_icon

IRF9530NPBF

PD - 91523AIRF9530NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9530NS)VDSS = -100V Low-profile through-hole (IRF9530NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG P-ChannelID = -14A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

 6.2. Size:113K  international rectifier
irf9530n.pdf pdf_icon

IRF9530NPBF

PD - 91482CIRF9530NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 P-ChannelG Fully Avalanche RatedID = -14ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Keywords - IRF9530NPBF MOSFET datasheet

 IRF9530NPBF cross reference
 IRF9530NPBF equivalent finder
 IRF9530NPBF lookup
 IRF9530NPBF substitution
 IRF9530NPBF replacement

 

 
Back to Top

 


 
.