All MOSFET. IRF9530NPBF Equivalents Search

 

IRF9530NPBF Spec and Replacement


   Type Designator: IRF9530NPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-220AB

 IRF9530NPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9530NPBF Specs

 ..1. Size:225K  international rectifier
 irf9530npbf.pdf pdf_icon

IRF9530NPBF

IRF9530NPbF l Advanced Process Technology D l Dynamic dv/dt Rating DSS l 175 C Operating Temperature l Fast Switching DS(on) l P-Channel G l Fully Avalanche Rated D l Lead-Free S Description ... See More ⇒

 ..2. Size:1531K  cn vbsemi
 irf9530npbf.pdf pdf_icon

IRF9530NPBF

IRF9530NPBF www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.167 at VGS = - 10 V - 18 - 100 37 100 % Rg and UIS Tested 0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Power Swi... See More ⇒

 6.1. Size:173K  international rectifier
 irf9530ns.pdf pdf_icon

IRF9530NPBF

PD - 91523A IRF9530NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9530NS) VDSS = -100V Low-profile through-hole (IRF9530NL) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G P-Channel ID = -14A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi... See More ⇒

 6.2. Size:113K  international rectifier
 irf9530n.pdf pdf_icon

IRF9530NPBF

PD - 91482C IRF9530N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature Fast Switching RDS(on) = 0.20 P-Channel G Fully Avalanche Rated ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are... See More ⇒

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Detailed specifications: SSM4880AGM , SSM4920M , SSM4924GM , SSM4953M , SSM4955GM , SSM4957M , SSM5G02TU , SSM5G04TU , IRLB4132 , IRF9530NSPBF , IRF9530PBF , IRF9530S , IRF9530SMD , IRF9530SPBF , IRF9540NLPBF , IRF9540NPBF , IRF9540NSPBF .

Keywords - IRF9530NPBF MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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