IRF9530NPBF Datasheet. Specs and Replacement

Type Designator: IRF9530NPBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-220AB

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IRF9530NPBF substitution

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IRF9530NPBF datasheet

 ..1. Size:225K  international rectifier
irf9530npbf.pdf pdf_icon

IRF9530NPBF

IRF9530NPbF l Advanced Process Technology D l Dynamic dv/dt Rating DSS l 175 C Operating Temperature l Fast Switching DS(on) l P-Channel G l Fully Avalanche Rated D l Lead-Free S Description ... See More ⇒

 ..2. Size:1531K  cn vbsemi
irf9530npbf.pdf pdf_icon

IRF9530NPBF

IRF9530NPBF www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.167 at VGS = - 10 V - 18 - 100 37 100 % Rg and UIS Tested 0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Power Swi... See More ⇒

 6.1. Size:173K  international rectifier
irf9530ns.pdf pdf_icon

IRF9530NPBF

PD - 91523A IRF9530NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9530NS) VDSS = -100V Low-profile through-hole (IRF9530NL) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G P-Channel ID = -14A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi... See More ⇒

 6.2. Size:113K  international rectifier
irf9530n.pdf pdf_icon

IRF9530NPBF

PD - 91482C IRF9530N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature Fast Switching RDS(on) = 0.20 P-Channel G Fully Avalanche Rated ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are... See More ⇒

Detailed specifications: SSM4880AGM, SSM4920M, SSM4924GM, SSM4953M, SSM4955GM, SSM4957M, SSM5G02TU, SSM5G04TU, IRLB4132, IRF9530NSPBF, IRF9530PBF, IRF9530S, IRF9530SMD, IRF9530SPBF, IRF9540NLPBF, IRF9540NPBF, IRF9540NSPBF

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