IRF9530SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF9530SPBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 88 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 12 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 38 nC
Tiempo de subida (tr): 52 nS
Conductancia de drenaje-sustrato (Cd): 340 pF
Resistencia entre drenaje y fuente RDS(on): 0.3 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET IRF9530SPBF
IRF9530SPBF Datasheet (PDF)
irf9530spbf.pdf
PD- 95988IRF9530SPbF Lead-Free06/06/05Document Number: 91077 www.vishay.com1IRF9530SPbFDocument Number: 91077 www.vishay.com2IRF9530SPbFDocument Number: 91077 www.vishay.com3IRF9530SPbFDocument Number: 91077 www.vishay.com4IRF9530SPbFDocument Number: 91077 www.vishay.com5IRF9530SPbFDocument Number: 91077 www.vishay.com6IRF9530SPbFPeak Diode R
irf9530spbf sihf9530s.pdf
IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig
irf9530s sihf9530s.pdf
IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig
irf9530s.pdf
IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig
irf9530smd.pdf
IRF9530SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS !VDSS -100VID(cont) -8ARDS(on) 0.35FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS
irf9530s.pdf
INCHANGE Semiconductorisc P-Channel Mosfet Transistor IRF9530SFEATURES-12A-100VSingle pulse avalanche energy ratedStatic Drain-Source On-Resistance: R =0.3(Max)DS(on)SOA is power dissipation limitedNanosecond switching speedsLinear transfer characteristicsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONThe
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .