Справочник MOSFET. IRF9530SPBF

 

IRF9530SPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF9530SPBF
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 88 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 38 nC
   trⓘ - Время нарастания: 52 ns
   Cossⓘ - Выходная емкость: 340 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
   Тип корпуса: TO-263

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IRF9530SPBF Datasheet (PDF)

 ..1. Size:1028K  international rectifier
 irf9530spbf.pdf

IRF9530SPBF IRF9530SPBF

PD- 95988IRF9530SPbF Lead-Free06/06/05Document Number: 91077 www.vishay.com1IRF9530SPbFDocument Number: 91077 www.vishay.com2IRF9530SPbFDocument Number: 91077 www.vishay.com3IRF9530SPbFDocument Number: 91077 www.vishay.com4IRF9530SPbFDocument Number: 91077 www.vishay.com5IRF9530SPbFDocument Number: 91077 www.vishay.com6IRF9530SPbFPeak Diode R

 ..2. Size:196K  vishay
 irf9530spbf sihf9530s.pdf

IRF9530SPBF IRF9530SPBF

IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig

 6.1. Size:176K  international rectifier
 irf9530s.pdf

IRF9530SPBF IRF9530SPBF

 6.2. Size:171K  vishay
 irf9530s sihf9530s.pdf

IRF9530SPBF IRF9530SPBF

IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig

 6.3. Size:170K  vishay
 irf9530s.pdf

IRF9530SPBF IRF9530SPBF

IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig

 6.4. Size:22K  semelab
 irf9530smd.pdf

IRF9530SPBF IRF9530SPBF

IRF9530SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS !VDSS -100VID(cont) -8ARDS(on) 0.35FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS

 6.5. Size:232K  inchange semiconductor
 irf9530s.pdf

IRF9530SPBF IRF9530SPBF

INCHANGE Semiconductorisc P-Channel Mosfet Transistor IRF9530SFEATURES-12A-100VSingle pulse avalanche energy ratedStatic Drain-Source On-Resistance: R =0.3(Max)DS(on)SOA is power dissipation limitedNanosecond switching speedsLinear transfer characteristicsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONThe

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