IRF9952QPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9952QPBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.8 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: SO-8

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IRF9952QPBF datasheet

 ..1. Size:280K  international rectifier
 irf9952qpbf.pdf pdf_icon

IRF9952QPBF

PD - 96115 IRF9952QPbF HEXFET Power MOSFET l Advanced Process Technology N-CHANNEL MOSFET l Ultra Low On-Resistance 1 8 N-Ch P-Ch S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 30V -30V 3 6 l Available in Tape & Reel S2 D2 l 150 C Operating Temperature 4 5 G2 D2 l Automotive [Q101] Qualified P-CHANNEL MOSFET RDS(on) 0.10 0.25 l Lead-Free Top V

 6.1. Size:324K  1
 auirf9952q.pdf pdf_icon

IRF9952QPBF

AUTOMOTIVE GRADE AUIRF9952Q Features N-CHANNEL MOSFET Advanced Planar Technology N-CH P-CH 1 8 S1 D1 Low On-Resistance 2 7 G1 D1 Logic Level Gate Drive VDSS 30V -30V 3 6 S2 D2 Dual N and P Channel MOSFET 4 5 G2 D2 RDS(on) max. 0.10 0.25 Dynamic dv/dt Rating P-CHANNEL MOSFET 150 C Operating Temperature Top View ID 3.5A -2.3A

 7.1. Size:224K  international rectifier
 irf9952pbf.pdf pdf_icon

IRF9952QPBF

PD - 95135 IRF9952PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET 1 8 N-Ch P-Ch S1 D1 l Ultra Low On-Resistance 2 7 l Dual N and P Channel MOSFET G1 D1 l Surface Mount VDSS 30V -30V 3 6 S2 D2 l Very Low Gate Charge and 4 5 G2 D2 Switching Losses P-CHANNEL MOSFET RDS(on) 0.10 0.25 l Fully Avalanche Rated Top View l Lead-Free Recommended upgrade

 7.2. Size:134K  international rectifier
 irf9952.pdf pdf_icon

IRF9952QPBF

PD - 9.1561A IRF9952 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFE T 1 8 N-Ch P-Ch S1 D1 Ultra Low On-Resistance 2 7 Dual N and P Channel MOSFET G1 D1 Surface Mount VDSS 30V -30V 3 6 S2 D2 Very Low Gate Charge and 4 5 G2 D2 Switching Losses P -CH AN N EL M OSFET RDS(on) 0.10 0.25 Fully Avalanche Rated T op V iew Recommended upgrade

MOSTRAR MÁS

Otros transistores... IRF9620SPBF, IRF9630PBF, IRF9630SPBF, IRF9640L, IRF9640LPBF, IRF9640PBF, IRF9640SPBF, IRF9910PBF-1, AO4407, IRF9Z10PBF, IRF9Z14L, IRF9Z14LPBF, IRF9Z14PBF, IRF9Z14SPBF, IRF9Z20PBF, IRF9Z24L, IRF9Z24NLPBF