IRF9Z14SPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9Z14SPBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 43 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.7 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 63 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm

Encapsulados: TO-263

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IRF9Z14SPBF datasheet

 ..1. Size:1222K  international rectifier
 irf9z14spbf irf9z14lpbf.pdf pdf_icon

IRF9Z14SPBF

PD-96014 IRF9Z14SPbF IRF9Z14LPbF Lead-Free 06/08/05 Document Number 91088 www.vishay.com 1 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 2 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 3 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 4 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 5 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 6 IR

 ..2. Size:194K  vishay
 irf9z14spbf sihf9z14l sihf9z14s.pdf pdf_icon

IRF9Z14SPBF

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating Temperature Qgs (nC) 3.8

 6.1. Size:361K  international rectifier
 irf9z14s.pdf pdf_icon

IRF9Z14SPBF

PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z14S) VDSS = -60V Low-profile through-hole (IRF9Z14L) 175 C Operating Temperature RDS(on) = 0.50 Fast Switching G P- Channel ID = -6.7A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev

 6.2. Size:361K  international rectifier
 irf9z14s irf9z14l.pdf pdf_icon

IRF9Z14SPBF

PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z14S) VDSS = -60V Low-profile through-hole (IRF9Z14L) 175 C Operating Temperature RDS(on) = 0.50 Fast Switching G P- Channel ID = -6.7A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev

MOSTRAR MÁS

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