IRF9Z14SPBF Todos los transistores

 

IRF9Z14SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF9Z14SPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 43 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 6.7 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 63 nS
   Conductancia de drenaje-sustrato (Cd): 170 pF
   Resistencia entre drenaje y fuente RDS(on): 0.5 Ohm
   Paquete / Cubierta: TO-263

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IRF9Z14SPBF Datasheet (PDF)

 ..1. Size:1222K  international rectifier
irf9z14spbf irf9z14lpbf.pdf

IRF9Z14SPBF IRF9Z14SPBF

PD-96014IRF9Z14SPbFIRF9Z14LPbF Lead-Free06/08/05Document Number: 91088 www.vishay.com1IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com2IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com3IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com4IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com5IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com6IR

 ..2. Size:194K  vishay
irf9z14spbf sihf9z14l sihf9z14s.pdf

IRF9Z14SPBF IRF9Z14SPBF

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S)Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating TemperatureQgs (nC) 3.8

 6.1. Size:361K  international rectifier
irf9z14s.pdf

IRF9Z14SPBF IRF9Z14SPBF

PD - 9.911AIRF9Z14S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z14S)VDSS = -60V Low-profile through-hole (IRF9Z14L) 175C Operating TemperatureRDS(on) = 0.50 Fast SwitchingG P- ChannelID = -6.7A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev

 6.2. Size:361K  international rectifier
irf9z14s irf9z14l.pdf

IRF9Z14SPBF IRF9Z14SPBF

PD - 9.911AIRF9Z14S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z14S)VDSS = -60V Low-profile through-hole (IRF9Z14L) 175C Operating TemperatureRDS(on) = 0.50 Fast SwitchingG P- ChannelID = -6.7A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev

 6.3. Size:169K  vishay
irf9z14s sihf9z14s irf9z14l sihf9z14l.pdf

IRF9Z14SPBF IRF9Z14SPBF

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S)Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating TemperatureQgs (nC) 3.8

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