IRF9Z14SPBF Datasheet. Specs and Replacement

Type Designator: IRF9Z14SPBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO-263

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IRF9Z14SPBF datasheet

 ..1. Size:1222K  international rectifier
 irf9z14spbf irf9z14lpbf.pdf pdf_icon

IRF9Z14SPBF

PD-96014 IRF9Z14SPbF IRF9Z14LPbF Lead-Free 06/08/05 Document Number 91088 www.vishay.com 1 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 2 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 3 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 4 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 5 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 6 IR... See More ⇒

 ..2. Size:194K  vishay
 irf9z14spbf sihf9z14l sihf9z14s.pdf pdf_icon

IRF9Z14SPBF

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating Temperature Qgs (nC) 3.8 ... See More ⇒

 6.1. Size:361K  international rectifier
 irf9z14s.pdf pdf_icon

IRF9Z14SPBF

PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z14S) VDSS = -60V Low-profile through-hole (IRF9Z14L) 175 C Operating Temperature RDS(on) = 0.50 Fast Switching G P- Channel ID = -6.7A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev... See More ⇒

 6.2. Size:361K  international rectifier
 irf9z14s irf9z14l.pdf pdf_icon

IRF9Z14SPBF

PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z14S) VDSS = -60V Low-profile through-hole (IRF9Z14L) 175 C Operating Temperature RDS(on) = 0.50 Fast Switching G P- Channel ID = -6.7A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev... See More ⇒

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Detailed specifications: IRF9640PBF, IRF9640SPBF, IRF9910PBF-1, IRF9952QPBF, IRF9Z10PBF, IRF9Z14L, IRF9Z14LPBF, IRF9Z14PBF, 2SK3568, IRF9Z20PBF, IRF9Z24L, IRF9Z24NLPBF, IRF9Z24NPBF, IRF9Z24NSPBF, IRF9Z24PBF, IRF9Z24SPBF, IRF9Z30PBF

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