IRF9Z24NSPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF9Z24NSPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.175 Ohm
   Paquete / Cubierta: TO-263

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IRF9Z24NSPBF Datasheet (PDF)

..1. Size:389K international rectifier
irf9z24nlpbf irf9z24nspbf.pdf

PD- 95770IRF9Z24NSPbFIRF9Z24NLPBF Lead-Freewww.irf.com 104/25/05IRF9Z24NS/LPbF2 www.irf.comIRF9Z24NS/LPbFwww.irf.com 3IRF9Z24NS/LPbF4 www.irf.comIRF9Z24NS/LPbFwww.irf.com 5IRF9Z24NS/LPbF6 www.irf.comIRF9Z24NS/LPbFwww.irf.com 7IRF9Z24NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS

..2. Size:389K infineon
irf9z24nspbf irf9z24nlpbf.pdf

5.1. Size:168K international rectifier
irf9z24ns.pdf

PD - 91742AIRF9Z24NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z24NS)VDSS = -55V Low-profile through-hole (IRF9Z24NL) 175C Operating TemperatureRDS(on) = 0.175 P-ChannelG Fast SwitchingID = -12A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

5.2. Size:815K cn vbsemi
irf9z24ns.pdf

IRF9Z24NSwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Load

6.1. Size:2354K international rectifier
irf9z24npbf.pdf

PD - 94982IRF9Z24NPbF Lead-Freewww.irf.com 1 IRF9Z24NPbF2 www.irf.comIRF9Z24NPbFwww.irf.com 3IRF9Z24NPbF4 www.irf.comIRF9Z24NPbFwww.irf.com 5IRF9Z24NPbF6 www.irf.comIRF9Z24NPbFPeak Diode Recovery dv/dt Test Circuit *

6.2. Size:109K international rectifier
irf9z24n.pdf

PD -9.1484BIRF9Z24NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.175 P-ChannelG Fully Avalanche RatedID = -12ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

6.3. Size:110K infineon
irf9z24n.pdf

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