IRF9Z24NSPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF9Z24NSPBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
Package: TO-263
IRF9Z24NSPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF9Z24NSPBF Datasheet (PDF)
irf9z24nlpbf irf9z24nspbf.pdf
PD- 95770IRF9Z24NSPbFIRF9Z24NLPBF Lead-Freewww.irf.com 104/25/05IRF9Z24NS/LPbF2 www.irf.comIRF9Z24NS/LPbFwww.irf.com 3IRF9Z24NS/LPbF4 www.irf.comIRF9Z24NS/LPbFwww.irf.com 5IRF9Z24NS/LPbF6 www.irf.comIRF9Z24NS/LPbFwww.irf.com 7IRF9Z24NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS
irf9z24nspbf irf9z24nlpbf.pdf
PD- 95770IRF9Z24NSPbFIRF9Z24NLPBF Lead-Freewww.irf.com 104/25/05IRF9Z24NS/LPbF2 www.irf.comIRF9Z24NS/LPbFwww.irf.com 3IRF9Z24NS/LPbF4 www.irf.comIRF9Z24NS/LPbFwww.irf.com 5IRF9Z24NS/LPbF6 www.irf.comIRF9Z24NS/LPbFwww.irf.com 7IRF9Z24NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS
irf9z24ns.pdf
PD - 91742AIRF9Z24NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z24NS)VDSS = -55V Low-profile through-hole (IRF9Z24NL) 175C Operating TemperatureRDS(on) = 0.175 P-ChannelG Fast SwitchingID = -12A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi
irf9z24ns.pdf
IRF9Z24NSwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Load
irf9z24npbf.pdf
PD - 94982IRF9Z24NPbF Lead-Freewww.irf.com 1 IRF9Z24NPbF2 www.irf.comIRF9Z24NPbFwww.irf.com 3IRF9Z24NPbF4 www.irf.comIRF9Z24NPbFwww.irf.com 5IRF9Z24NPbF6 www.irf.comIRF9Z24NPbFPeak Diode Recovery dv/dt Test Circuit *
irf9z24n.pdf
PD -9.1484BIRF9Z24NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.175 P-ChannelG Fully Avalanche RatedID = -12ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area
irf9z24n.pdf
PD -9.1484BIRF9Z24NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.175 P-ChannelG Fully Avalanche RatedID = -12ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AP4438CGM-HF | KQB2N50 | SVSP80R180SE3 | KF7N80F
History: AP4438CGM-HF | KQB2N50 | SVSP80R180SE3 | KF7N80F
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