IRF9Z34PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9Z34PBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 88 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 620 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: TO-220AB

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IRF9Z34PBF datasheet

 ..1. Size:2039K  international rectifier
 irf9z34pbf.pdf pdf_icon

IRF9Z34PBF

PD - 94961 IRF9Z34PbF Lead-Free 01/30/04 Document Number 91092 www.vishay.com 1 IRF9Z34PbF Document Number 91092 www.vishay.com 2 IRF9Z34PbF Document Number 91092 www.vishay.com 3 IRF9Z34PbF Document Number 91092 www.vishay.com 4 IRF9Z34PbF Document Number 91092 www.vishay.com 5 IRF9Z34PbF Document Number 91092 www.vishay.com 6 IRF9Z34PbF TO-220AB Package O

 ..2. Size:198K  vishay
 irf9z34pbf sihf9z34.pdf pdf_icon

IRF9Z34PBF

IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.14 P-Channel RoHS* Qg (Max.) (nC) 34 COMPLIANT 175 C Operating Temperature Qgs (nC) 9.9 Fast Switching Qgd (nC) 16 Ease of Paralleling Configuration Single Simple Drive Requireme

 7.1. Size:108K  international rectifier
 irf9z34n.pdf pdf_icon

IRF9Z34PBF

PD - 9.1485B IRF9Z34N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.10 P-Channel G Fully Avalanche Rated ID = -19A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are

 7.2. Size:241K  international rectifier
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IRF9Z34PBF

PD - 97627A AUTOMOTIVE GRADE AUIRF9Z34N Features HEXFET Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -55V l Dynamic dV/dT Rating l 175 C Operating Temperature RDS(on) max. 0.10 l Fast Switching G l Fully Avalanche Rated ID S -19A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description S

MOSTRAR MÁS

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