All MOSFET. IRF9Z34PBF Datasheet

 

IRF9Z34PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF9Z34PBF

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 88 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 34 nC

Rise Time (tr): 120 nS

Drain-Source Capacitance (Cd): 620 pF

Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm

Package: TO-220AB

IRF9Z34PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9Z34PBF Datasheet (PDF)

1.1. irf9z34pbf.pdf Size:198K _upd-mosfet

IRF9Z34PBF
IRF9Z34PBF

IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 60 • Repetitive Avalanche Rated Available RDS(on) (Ω)VGS = - 10 V 0.14 • P-Channel RoHS* Qg (Max.) (nC) 34 COMPLIANT • 175 °C Operating Temperature Qgs (nC) 9.9 • Fast Switching Qgd (nC) 16 • Ease of Paralleling Configuration Single • Simple Drive Requireme

1.2. irf9z34pbf.pdf Size:2039K _international_rectifier

IRF9Z34PBF
IRF9Z34PBF

PD - 94961 IRF9Z34PbF Lead-Free 01/30/04 Document Number: 91092 www.vishay.com 1 IRF9Z34PbF Document Number: 91092 www.vishay.com 2 IRF9Z34PbF Document Number: 91092 www.vishay.com 3 IRF9Z34PbF Document Number: 91092 www.vishay.com 4 IRF9Z34PbF Document Number: 91092 www.vishay.com 5 IRF9Z34PbF Document Number: 91092 www.vishay.com 6 IRF9Z34PbF TO-220AB Package Outlin

 3.1. irf9z34npbf.pdf Size:240K _upd-mosfet

IRF9Z34PBF
IRF9Z34PBF

 IRF9Z34NPbF l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature l Fast Switching l P-Channel Ω l Fully Avalanche Rated G l Lead-Free Description S

3.2. irf9z34spbf.pdf Size:193K _upd-mosfet

IRF9Z34PBF
IRF9Z34PBF

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 • Advanced Process Technology RDS(on) ()VGS = - 10 V 0.14 • Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 • Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) • 175 °C Operating Temperature Qgs (nC) 9.9

 3.3. irf9z34l.pdf Size:190K _upd-mosfet

IRF9Z34PBF
IRF9Z34PBF

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 • Advanced Process Technology RDS(on) ()VGS = - 10 V 0.14 • Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 • Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) • 175 °C Operating Temperature Qgs (nC) 9.9

3.4. irf9z34nlpbf irf9z34nspbf.pdf Size:1102K _upd-mosfet

IRF9Z34PBF
IRF9Z34PBF

PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF • Lead-Free www.irf.com 1 04/25/05 IRF9Z34NS/LPbF 2 www.irf.com IRF9Z34NS/LPbF www.irf.com 3 IRF9Z34NS/LPbF 4 www.irf.com IRF9Z34NS/LPbF www.irf.com 5 IRF9Z34NS/LPbF 6 www.irf.com IRF9Z34NS/LPbF www.irf.com 7 IRF9Z34NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS

 3.5. irf9z34n.pdf Size:108K _international_rectifier

IRF9Z34PBF
IRF9Z34PBF

PD - 9.1485B IRF9Z34N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175C Operating Temperature Fast Switching RDS(on) = 0.10? P-Channel G Fully Avalanche Rated ID = -19A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

3.6. irf9z34s.pdf Size:334K _international_rectifier

IRF9Z34PBF
IRF9Z34PBF

PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34S) VDSS = -60V Low-profile through-hole (IRF9Z34L) 175C Operating Temperature RDS(on) = 0.14? Fast Switching G P- Channel ID = -18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

3.7. irf9z34ns.pdf Size:162K _international_rectifier

IRF9Z34PBF
IRF9Z34PBF

PD - 9.1525 IRF9Z34NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34NS) VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175C Operating Temperature RDS(on) = 0.10? Fast Switching G P-Channel ID = -19A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ext

3.8. irf9z34.pdf Size:174K _international_rectifier

IRF9Z34PBF
IRF9Z34PBF

3.9. irf9z34s sihf9z34s irf9z34l sihf9z34l.pdf Size:168K _vishay

IRF9Z34PBF
IRF9Z34PBF

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) (?)VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating Temperature Qgs (nC) 9.9 Fast Switchin

3.10. irf9z34 sihf9z34.pdf Size:197K _vishay

IRF9Z34PBF
IRF9Z34PBF

IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) (?)VGS = - 10 V 0.14 P-Channel RoHS* Qg (Max.) (nC) 34 COMPLIANT 175 C Operating Temperature Qgs (nC) 9.9 Fast Switching Qgd (nC) 16 Ease of Paralleling Configuration Single Simple Drive Requirements S Compliant

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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