IRFAC42 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFAC42  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO3

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IRFAC42 datasheet

 ..1. Size:51K  harris semi
irfac40 irfac42.pdf pdf_icon

IRFAC42

IRFAC40, Semiconductor IRFAC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, January 1998 N-Channel Power MOSFETs 6.2A and 5.4A, 600V Description rDS(ON) = 1.2 and 1.6 These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power Repetitive Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a Simple

 8.1. Size:150K  international rectifier
irfac40.pdf pdf_icon

IRFAC42

PD - 90587 REPETITIVE AVALANCHE AND dv/dt RATED IRFAC40 600V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAC40 600V 1.2 6.2 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig

 9.1. Size:45K  international rectifier
irfac32.pdf pdf_icon

IRFAC42

 9.2. Size:153K  international rectifier
irfac30.pdf pdf_icon

IRFAC42

PD -90513 REPETITIVE AVALANCHE AND dv/dt RATED IRFAC30 600V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAC30 600V 2.2 3.6 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design

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