IRFAC42 Datasheet. Specs and Replacement
Type Designator: IRFAC42 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO3
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IRFAC42 substitution
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IRFAC42 datasheet
irfac40 irfac42.pdf
IRFAC40, Semiconductor IRFAC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, January 1998 N-Channel Power MOSFETs 6.2A and 5.4A, 600V Description rDS(ON) = 1.2 and 1.6 These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power Repetitive Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a Simple ... See More ⇒
irfac40.pdf
PD - 90587 REPETITIVE AVALANCHE AND dv/dt RATED IRFAC40 600V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAC40 600V 1.2 6.2 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig... See More ⇒
irfac30.pdf
PD -90513 REPETITIVE AVALANCHE AND dv/dt RATED IRFAC30 600V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAC30 600V 2.2 3.6 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design... See More ⇒
Detailed specifications: IRF9Z34L, IRF9Z34NLPBF, IRF9Z34NPBF, IRF9Z34NSPBF, IRF9Z34PBF, IRF9Z34SPBF, IRFAC30, IRFAC40, IRFB31N20D, IRFAE30, IRFAE40, IRFAE50, IRFAF30, IRFAF50, IRFAG30, IRFAG40, IRFAG50
Keywords - IRFAC42 MOSFET specs
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