All MOSFET. IRFAC42 Datasheet

 

IRFAC42 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFAC42
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO3

 IRFAC42 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFAC42 Datasheet (PDF)

 ..1. Size:51K  harris semi
irfac40 irfac42.pdf

IRFAC42 IRFAC42

IRFAC40,SemiconductorIRFAC426.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,January 1998 N-Channel Power MOSFETs 6.2A and 5.4A, 600VDescription rDS(ON) = 1.2 and 1.6These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power Repetitive Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a Simple

 8.1. Size:150K  international rectifier
irfac40.pdf

IRFAC42 IRFAC42

PD - 90587REPETITIVE AVALANCHE AND dv/dt RATED IRFAC40600V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAC40 600V 1.2 6.2The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

 9.1. Size:45K  international rectifier
irfac32.pdf

IRFAC42

 9.2. Size:153K  international rectifier
irfac30.pdf

IRFAC42 IRFAC42

PD -90513REPETITIVE AVALANCHE AND dv/dt RATED IRFAC30600V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAC30 600V 2.2 3.6The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design

 9.3. Size:207K  inchange semiconductor
irfac32.pdf

IRFAC42 IRFAC42

isc N-Channel Mosfet Transistor IRFAC32FEATURESLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaRugged Gate Oxide TechnologyHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current ,high speed switchingSwitch mode power suppliesDC-AC converters for welding equip

 9.4. Size:209K  inchange semiconductor
irfac30.pdf

IRFAC42 IRFAC42

isc N-Channel Mosfet Transistor IRFAC30FEATURESLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaRugged Gate Oxide TechnologyHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current ,high speed switchingSwitch mode power suppliesDC-AC converters for welding equip

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top