IRFAF30 Todos los transistores

 

IRFAF30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFAF30
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: TO3
     - Selección de transistores por parámetros

 

IRFAF30 Datasheet (PDF)

 ..1. Size:149K  international rectifier
 irfaf30.pdf pdf_icon

IRFAF30

PD - 90617REPETITIVE AVALANCHE AND dv/dt RATED IRFAF30900V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAF30 900V 4.0 2.0The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

 ..2. Size:254K  inchange semiconductor
 irfaf30.pdf pdf_icon

IRFAF30

Isc N-Channel MOSFET Transistor IRFAF30FEATURESWith To-3 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 900 V

 9.1. Size:150K  international rectifier
 irfaf50.pdf pdf_icon

IRFAF30

PD - 90577REPETITIVE AVALANCHE AND dv/dt RATED IRFAF50900V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAF50 900V 1.6 6.2The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

 9.2. Size:151K  international rectifier
 irfaf40.pdf pdf_icon

IRFAF30

PD - 90581REPETITIVE AVALANCHE AND dv/dt RATED IRFAF40900V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAF40 900V 2.5 4.3The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IRF3708S | BUZ50BSM | FC694601 | P1260ATF | ECH8602M | IRHMK57260SE | OSG70R360DF

 

 
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