IRFAF30 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFAF30  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm

Encapsulados: TO3

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IRFAF30 datasheet

 ..1. Size:149K  international rectifier
 irfaf30.pdf pdf_icon

IRFAF30

PD - 90617 REPETITIVE AVALANCHE AND dv/dt RATED IRFAF30 900V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAF30 900V 4.0 2.0 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig

 ..2. Size:254K  inchange semiconductor
 irfaf30.pdf pdf_icon

IRFAF30

Isc N-Channel MOSFET Transistor IRFAF30 FEATURES With To-3 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 900 V

 9.1. Size:150K  international rectifier
 irfaf50.pdf pdf_icon

IRFAF30

PD - 90577 REPETITIVE AVALANCHE AND dv/dt RATED IRFAF50 900V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAF50 900V 1.6 6.2 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig

 9.2. Size:151K  international rectifier
 irfaf40.pdf pdf_icon

IRFAF30

PD - 90581 REPETITIVE AVALANCHE AND dv/dt RATED IRFAF40 900V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAF40 900V 2.5 4.3 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig

MOSTRAR MÁS

Otros transistores... IRF9Z34PBF, IRF9Z34SPBF, IRFAC30, IRFAC40, IRFAC42, IRFAE30, IRFAE40, IRFAE50, IRFZ48N, IRFAF50, IRFAG30, IRFAG40, IRFAG50, SSM5G06FE, SSM5G09TU, SSM5G10TU, SSM5G11TU