All MOSFET. IRFAF30 Datasheet

 

IRFAF30 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFAF30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 66 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO3

 IRFAF30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFAF30 Datasheet (PDF)

 ..1. Size:149K  international rectifier
 irfaf30.pdf

IRFAF30 IRFAF30

PD - 90617REPETITIVE AVALANCHE AND dv/dt RATED IRFAF30900V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAF30 900V 4.0 2.0The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

 ..2. Size:254K  inchange semiconductor
 irfaf30.pdf

IRFAF30 IRFAF30

Isc N-Channel MOSFET Transistor IRFAF30FEATURESWith To-3 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 900 V

 9.1. Size:150K  international rectifier
 irfaf50.pdf

IRFAF30 IRFAF30

PD - 90577REPETITIVE AVALANCHE AND dv/dt RATED IRFAF50900V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAF50 900V 1.6 6.2The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

 9.2. Size:151K  international rectifier
 irfaf40.pdf

IRFAF30 IRFAF30

PD - 90581REPETITIVE AVALANCHE AND dv/dt RATED IRFAF40900V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAF40 900V 2.5 4.3The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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