SSM5G09TU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM5G09TU  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 1.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: 2-2R1A

  📄📄 Copiar 

 Búsqueda de reemplazo de SSM5G09TU MOSFET

- Selecciónⓘ de transistores por parámetros

 

SSM5G09TU datasheet

 ..1. Size:306K  toshiba
 ssm5g09tu.pdf pdf_icon

SSM5G09TU

SSM5G09TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G09TU DC-DC Converter Unit mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25 C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS 8 V DC ID -1.5 Drain curre

 8.1. Size:218K  toshiba
 ssm5g02tu.pdf pdf_icon

SSM5G09TU

SSM5G02TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G02TU DC-DC Converter Unit mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25 C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS 12 V DC ID -1.0 Drain curre

 8.2. Size:290K  toshiba
 ssm5g06fe.pdf pdf_icon

SSM5G09TU

SSM5G06FE Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5G06FE DC-DC Converter Applications Unit mm Combined a P-channel MOSFET and a Schottky barrier diode in one package. 1.6 0.05 Optimum for high-density mounting in small packages 1.2 0.05 Absolute Maximum Ratings (Ta = 25 C) MOSFET 1 5 Characteristics Symbol Rating Unit 2 Drain-So

 8.3. Size:205K  toshiba
 ssm5g04tu.pdf pdf_icon

SSM5G09TU

SSM5G04TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G04TU DC-DC Converter Unit mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25 C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS 12 V DC ID -1.0 Drain curre

MOSTRAR MÁS

Otros transistores... IRFAE40, IRFAE50, IRFAF30, IRFAF50, IRFAG30, IRFAG40, IRFAG50, SSM5G06FE, AON7403, SSM5G10TU, SSM5G11TU, SSM5H01TU, SSM5H05TU, SSM5H06FE, SSM5H07TU, SSM5H08TU, SSM5H10TU