SSM5H06FE Todos los transistores

 

SSM5H06FE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM5H06FE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 9.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: 2-2P1C
 

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SSM5H06FE Datasheet (PDF)

 ..1. Size:222K  toshiba
 ssm5h06fe.pdf pdf_icon

SSM5H06FE

SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode in one Package 1.60.05 Small package 1.20.05Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating Unit 1 5Drain-Source voltage VDS 20 V 2VGSS 10 Gate-Source voltage V ID 100DC

 8.1. Size:267K  1
 ssm5h05tu.pdf pdf_icon

SSM5H06FE

SSM5H05TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode in one package. Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.5Drain current A

 8.2. Size:309K  toshiba
 ssm5h07tu.pdf pdf_icon

SSM5H06FE

SSM5H07TU Silicon N Channel MOS Type (-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H07TU DC-DC Converter Unit: mm Nch MOSFET and Schottky diode combined in one package Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.2Drain current A

 8.3. Size:205K  toshiba
 ssm5h01tu.pdf pdf_icon

SSM5H06FE

SSM5H01TU Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5H01TU DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 30 VGate-Source voltage VGSS 20 VDC ID 1.4Drain current

MOSTRAR MÁS

Otros transistores... IRFAG40 , IRFAG50 , SSM5G06FE , SSM5G09TU , SSM5G10TU , SSM5G11TU , SSM5H01TU , SSM5H05TU , HY1906P , SSM5H07TU , SSM5H08TU , SSM5H10TU , SSM5H11TU , SSM5H12TU , SSM5H16TU , SSM5H90ATU , SSM5P15FE .

History: JFFC10N65C | SSF60R190SFD | MDP1723 | WMM18N50C4 | MTC5806V8 | WMO07N60C4

 

 
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