SSM5H06FE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM5H06FE  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 9.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm

Encapsulados: 2-2P1C

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SSM5H06FE datasheet

 ..1. Size:222K  toshiba
 ssm5h06fe.pdf pdf_icon

SSM5H06FE

SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter Unit mm Combined Nch MOSFET and Schottky Diode in one Package 1.6 0.05 Small package 1.2 0.05 Absolute Maximum Ratings (Ta = 25 C) MOSFET Characteristics Symbol Rating Unit 1 5 Drain-Source voltage VDS 20 V 2 VGSS 10 Gate-Source voltage V ID 100 DC

 8.1. Size:267K  1
 ssm5h05tu.pdf pdf_icon

SSM5H06FE

SSM5H05TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Unit mm Combined Nch MOSFET and Schottky Diode in one package. Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25 C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS 12 V DC ID 1.5 Drain current A

 8.2. Size:309K  toshiba
 ssm5h07tu.pdf pdf_icon

SSM5H06FE

SSM5H07TU Silicon N Channel MOS Type ( -MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H07TU DC-DC Converter Unit mm Nch MOSFET and Schottky diode combined in one package Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25 C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS 12 V DC ID 1.2 Drain current A

 8.3. Size:205K  toshiba
 ssm5h01tu.pdf pdf_icon

SSM5H06FE

SSM5H01TU Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5H01TU DC-DC Converter Unit mm Combined Nch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25 C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS 20 V DC ID 1.4 Drain current

MOSTRAR MÁS

Otros transistores... IRFAG40, IRFAG50, SSM5G06FE, SSM5G09TU, SSM5G10TU, SSM5G11TU, SSM5H01TU, SSM5H05TU, AOD4184A, SSM5H07TU, SSM5H08TU, SSM5H10TU, SSM5H11TU, SSM5H12TU, SSM5H16TU, SSM5H90ATU, SSM5P15FE