SSM5H11TU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM5H11TU  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 34 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.122 Ohm

Encapsulados: 2-2R1A

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SSM5H11TU datasheet

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SSM5H11TU

SSM5H11TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H11TU DC-DC Converter Applications 4.0-V drive Unit mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source

 8.1. Size:201K  toshiba
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SSM5H11TU

SSM5H12TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H12TU DC-DC Converter Applications 1.8-V drive Unit mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source

 8.2. Size:230K  toshiba
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SSM5H11TU

SSM5H10TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H10TU DC-DC Converter Applications 1.5-V drive Unit mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-sourc

 8.3. Size:192K  toshiba
 ssm5h16tu.pdf pdf_icon

SSM5H11TU

SSM5H16TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H16TU DC-DC Converter Applications 1.8-V drive Unit mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-sourc

MOSTRAR MÁS

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