SSM5H16TU Todos los transistores

 

SSM5H16TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM5H16TU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 43 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.133 Ohm
   Paquete / Cubierta: 2-2R1A
 

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SSM5H16TU Datasheet (PDF)

 ..1. Size:192K  toshiba
 ssm5h16tu.pdf pdf_icon

SSM5H16TU

SSM5H16TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H16TU DC-DC Converter Applications 1.8-V driveUnit: mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 30 VGate-sourc

 8.1. Size:201K  toshiba
 ssm5h12tu.pdf pdf_icon

SSM5H16TU

SSM5H12TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H12TU DC-DC Converter Applications 1.8-V driveUnit: mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 30 VGate-source

 8.2. Size:220K  toshiba
 ssm5h11tu.pdf pdf_icon

SSM5H16TU

SSM5H11TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H11TU DC-DC Converter Applications 4.0-V driveUnit: mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 30 VGate-source

 8.3. Size:230K  toshiba
 ssm5h10tu.pdf pdf_icon

SSM5H16TU

SSM5H10TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H10TU DC-DC Converter Applications 1.5-V drive Unit: mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 20 VGate-sourc

MOSTRAR MÁS

Otros transistores... SSM5H01TU , SSM5H05TU , SSM5H06FE , SSM5H07TU , SSM5H08TU , SSM5H10TU , SSM5H11TU , SSM5H12TU , IRFZ44N , SSM5H90ATU , SSM5P15FE , SSM60T03GH , SSM60T03GJ , SSM60T03GP , SSM60T03GS , SSM630GP , SSM6618M .

History: SST4393 | EM6M2

 

 
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