SSM5H16TU Datasheet and Replacement. Cross Reference Search

SSM5H16TU Datasheet (PDF)

..1. Size:192K toshiba
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SSM5H16TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H16TU DC-DC Converter Applications 1.8-V driveUnit: mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 30 VGate-sourc

8.1. Size:201K toshiba
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SSM5H12TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H12TU DC-DC Converter Applications 1.8-V driveUnit: mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 30 VGate-source

8.2. Size:220K toshiba
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SSM5H11TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H11TU DC-DC Converter Applications 4.0-V driveUnit: mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 30 VGate-source

8.3. Size:230K toshiba
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SSM5H10TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H10TU DC-DC Converter Applications 1.5-V drive Unit: mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 20 VGate-sourc

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