SSM60T03GJ Todos los transistores

 

SSM60T03GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM60T03GJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 57.5 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO-251

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SSM60T03GJ datasheet

 ..1. Size:617K  silicon standard
 ssm60t03gh ssm60t03gj.pdf pdf_icon

SSM60T03GJ

SSM60T03GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM60T03 acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It is RDS(ON) 12m suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 45A D The SSM60T03GH is in a TO-252 package, which is Pb-free; RoHS

 5.1. Size:385K  silicon standard
 ssm60t03gp ssm60t03gs.pdf pdf_icon

SSM60T03GJ

SSM60T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 30V D Simple drive requirement RDS(ON) 12m Fast switching ID 45A G Pb-free, RoHS compliant. S DESCRIPTION G The SSM60T03GS is in a TO-263 package, which is widely used for D S commercial and industrial surface-mount applications. This device is TO-263 (S) suitable for low-voltage applications such as DC

 6.1. Size:310K  silicon standard
 ssm60t03h ssm60t03j.pdf pdf_icon

SSM60T03GJ

Otros transistores... SSM5H08TU , SSM5H10TU , SSM5H11TU , SSM5H12TU , SSM5H16TU , SSM5H90ATU , SSM5P15FE , SSM60T03GH , 20N60 , SSM60T03GP , SSM60T03GS , SSM630GP , SSM6618M , SSM6679GM , SSM6680GM , SSM6923O , SSM6G18NU .

History: BUZ72A

 

 

 

 

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