SSM6679GM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM6679GM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 950 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: SO-8

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SSM6679GM datasheet

 ..1. Size:194K  silicon standard
 ssm6679gm.pdf pdf_icon

SSM6679GM

SSM6679GM P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D D BVDSS -30V Simple Drive Requirement D D Low On-resistance RDS(ON) 9m G Fast Switching Characteristic ID -14A S S SO-8 S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D provide the designer with the best combination of fast switching, ruggedized device design, low on-resist

 9.1. Size:148K  silicon standard
 ssm6618m.pdf pdf_icon

SSM6679GM

SSM6618M N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV 25V DSS D D Fast switching speed D RDS(ON) 30m D Surface-mount package ID 7A G S S SO-8 S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and G cost-effectiveness. S Absolute Maximum R

 9.2. Size:593K  silicon standard
 ssm6680gm.pdf pdf_icon

SSM6679GM

SSM6680GM N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM6680GM acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It RDS(ON) 11m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 11.5A D The SSM6680M is supplied in an RoHS-compliant Pb-free; RoHS-c

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