SSM6J216FE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM6J216FE  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 4.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: ES6

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SSM6J216FE datasheet

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 ssm6j216fe.pdf pdf_icon

SSM6J216FE

SSM6J216FE MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J216FE SSM6J216FE SSM6J216FE SSM6J216FE 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 88.1 m (max) (@VGS = -1.5 V) RDS(ON) = 56.0 m (max) (@VGS

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 ssm6j213fe.pdf pdf_icon

SSM6J216FE

SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J213FE Power Management Switch Applications Unit mm 1.5-V drive Low ON-resistance RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25

 7.2. Size:226K  toshiba
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SSM6J216FE

SSM6J215FE MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J215FE SSM6J215FE SSM6J215FE SSM6J215FE 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 154 m (max) (@VGS = -1.5 V) RDS(ON) = 104 m (max) (@VGS =

 7.3. Size:157K  toshiba
 ssm6j21tu.pdf pdf_icon

SSM6J216FE

SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) SSM6J21TU High Current Switching Applications Unit mm Suitable for high-density mounting due to compact package Low on resistance Ron = 88 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS 12

MOSTRAR MÁS

Otros transistores... SSM60T03GS, SSM630GP, SSM6618M, SSM6679GM, SSM6680GM, SSM6923O, SSM6G18NU, SSM6H19NU, IRF640N, SSM6J414TU, SSM6J505NU, SSM6J507NU, SSM6J512NU, SSM6J771G, SSM6K217FE, SSM6K504NU, SSM6K781G