SSM6J216FE Todos los transistores

 

SSM6J216FE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM6J216FE
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: ES6
 

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SSM6J216FE Datasheet (PDF)

 ..1. Size:215K  toshiba
 ssm6j216fe.pdf pdf_icon

SSM6J216FE

SSM6J216FEMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J216FESSM6J216FESSM6J216FESSM6J216FE1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 88.1 m (max) (@VGS = -1.5 V) RDS(ON) = 56.0 m (max) (@VGS

 7.1. Size:202K  toshiba
 ssm6j213fe.pdf pdf_icon

SSM6J216FE

SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J213FE Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25

 7.2. Size:226K  toshiba
 ssm6j215fe.pdf pdf_icon

SSM6J216FE

SSM6J215FEMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J215FESSM6J215FESSM6J215FESSM6J215FE1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 154 m (max) (@VGS = -1.5 V) RDS(ON) = 104 m (max) (@VGS =

 7.3. Size:157K  toshiba
 ssm6j21tu.pdf pdf_icon

SSM6J216FE

SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J21TU High Current Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on resistance: Ron = 88 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12

MOSTRAR MÁS

Otros transistores... SSM60T03GS , SSM630GP , SSM6618M , SSM6679GM , SSM6680GM , SSM6923O , SSM6G18NU , SSM6H19NU , IRF630 , SSM6J414TU , SSM6J505NU , SSM6J507NU , SSM6J512NU , SSM6J771G , SSM6K217FE , SSM6K504NU , SSM6K781G .

History: TPC8024-H | SML5011AFN | BFD82 | IRLML6402TRPBF

 

 
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