SSM6J414TU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM6J414TU 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 220 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0225 Ohm
Encapsulados: UF6
📄📄 Copiar
Búsqueda de reemplazo de SSM6J414TU MOSFET
- Selecciónⓘ de transistores por parámetros
SSM6J414TU datasheet
ssm6j414tu.pdf
SSM6J414TU MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J414TU SSM6J414TU SSM6J414TU SSM6J414TU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 54 m (max) (@VGS = -1.5 V) RDS(ON) = 36 m (max) (@VGS = -
ssm6j410tu.pdf
SSM6J410TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J410TU Power Management Switch Applications Unit mm High-Speed Switching Applications 4-V drive Low ON-resistance RDS(ON) = 393m (max) (@VGS = 4 V) RDS(ON) = 216m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-Sou
ssm6j412tu.pdf
SSM6J412TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J412TU Power Management Switch Applications Unit mm 2.1 0.1 1.5-V drive 1.7 0.1 Low ON-resistance RDS(ON) = 99.6 m (max) (@VGS = -1.5 V) RDS(ON) = 67.8 m (max) (@VGS = -1.8 V) RDS(ON) = 51.4 m (max) (@VGS = -2.5 V) 1 6 RDS(ON) = 42.7 m (max) (@VGS = -4.5 V) 5 2 A
ssm6j402tu.pdf
SSM6J402TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J402TU DC/DC Converter Application High-Speed Switching Applications unit mm 2.1 0.1 4.0 V drive 1.7 0.1 Low ON-resistance RDS(ON) = 225m max (@VGS = -4 V) RDS(ON) = 117m max (@VGS = -10 V) 1 6 2 5 Absolute Maximum Ratings (Ta = 25 C) 3 4 Characteristic Symbol Rating
Otros transistores... SSM630GP, SSM6618M, SSM6679GM, SSM6680GM, SSM6923O, SSM6G18NU, SSM6H19NU, SSM6J216FE, IRFP260N, SSM6J505NU, SSM6J507NU, SSM6J512NU, SSM6J771G, SSM6K217FE, SSM6K504NU, SSM6K781G, SSM6N55NU
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BCD70N07A | BCD90N03 | BCD80N06 | T50N06 | H50N06 | BCD12N65 | BCT12N65 | BCD4N65 | BCT4N65 | BCD7N65 | BCT7N65 | BCT20N65 | ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q
Popular searches
2sc1627 | aoe6936 datasheet | g40t60an3h datasheet | j5027-r datasheet | transistor a1015 datasheet | bf199 transistor equivalent | bu801 | c8550 transistor datasheet
