SSM6J505NU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM6J505NU 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 800 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Encapsulados: UDFN6B
📄📄 Copiar
Búsqueda de reemplazo de SSM6J505NU MOSFET
- Selecciónⓘ de transistores por parámetros
SSM6J505NU datasheet
ssm6j505nu.pdf
SSM6J505NU MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J505NU SSM6J505NU SSM6J505NU SSM6J505NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 61 m (max) (@VGS = -1.2 V) RDS(ON) = 30 m (max) (@VGS = -
ssm6j507nu.pdf
SSM6J507NU MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J507NU SSM6J507NU SSM6J507NU SSM6J507NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 4 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 20 m (max) (@VGS = -10 V) RDS(ON) = 28 m (max) (@VGS = -4.5
ssm6j503nu.pdf
SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J503NU Power Management Switch Applications Unit mm 1.5V drive Low ON-resistance RDS(ON)= 89.6 m (max) (@VGS = -1.5 V) RDS(ON) = 57.9 m (max) (@VGS = -1.8 V) RDS(ON) = 41.7 m (max) (@VGS = -2.5 V) RDS(ON) = 32.4 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 C
ssm6j502nu.pdf
SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS ) SSM6J502NU Power Management Switch Applications Unit mm 1.5V drive Low ON-resistance RDS(ON) = 60.5 m (max) (@VGS = -1.5 V) RDS(ON) = 38.4 m (max) (@VGS = -1.8 V) RDS(ON) = 28.3 m (max) (@VGS = -2.5 V) RDS(ON) = 23.1 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 C
Otros transistores... SSM6618M, SSM6679GM, SSM6680GM, SSM6923O, SSM6G18NU, SSM6H19NU, SSM6J216FE, SSM6J414TU, AO3400, SSM6J507NU, SSM6J512NU, SSM6J771G, SSM6K217FE, SSM6K504NU, SSM6K781G, SSM6N55NU, SSM6N56FE
History: MTB2D5N03BH8 | PTF13N50
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BCD70N07A | BCD90N03 | BCD80N06 | T50N06 | H50N06 | BCD12N65 | BCT12N65 | BCD4N65 | BCT4N65 | BCD7N65 | BCT7N65 | BCT20N65 | ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q
Popular searches
aoe6936 datasheet | g40t60an3h datasheet | j5027-r datasheet | transistor a1015 datasheet | bf199 transistor equivalent | bu801 | c8550 transistor datasheet | mj21194 transistor datasheet
