All MOSFET. SSM6J505NU Datasheet

 

SSM6J505NU Datasheet and Replacement


   Type Designator: SSM6J505NU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: UDFN6B
 

 SSM6J505NU substitution

   - MOSFET ⓘ Cross-Reference Search

 

SSM6J505NU Datasheet (PDF)

 ..1. Size:235K  toshiba
 ssm6j505nu.pdf pdf_icon

SSM6J505NU

SSM6J505NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J505NUSSM6J505NUSSM6J505NUSSM6J505NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.2 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 61 m (max) (@VGS = -1.2 V) RDS(ON) = 30 m (max) (@VGS = -

 7.1. Size:240K  toshiba
 ssm6j507nu.pdf pdf_icon

SSM6J505NU

SSM6J507NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J507NUSSM6J507NUSSM6J507NUSSM6J507NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 20 m (max) (@VGS = -10 V) RDS(ON) = 28 m (max) (@VGS = -4.5

 7.2. Size:237K  toshiba
 ssm6j503nu.pdf pdf_icon

SSM6J505NU

SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J503NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON)= 89.6 m (max) (@VGS = -1.5 V) RDS(ON) = 57.9 m (max) (@VGS = -1.8 V) RDS(ON) = 41.7 m (max) (@VGS = -2.5 V) RDS(ON) = 32.4 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C

 7.3. Size:236K  toshiba
 ssm6j502nu.pdf pdf_icon

SSM6J505NU

SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J502NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 60.5 m (max) (@VGS = -1.5 V) RDS(ON) = 38.4 m (max) (@VGS = -1.8 V) RDS(ON) = 28.3 m (max) (@VGS = -2.5 V) RDS(ON) = 23.1 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C

SHOW MORE

Datasheet: SSM6618M , SSM6679GM , SSM6680GM , SSM6923O , SSM6G18NU , SSM6H19NU , SSM6J216FE , SSM6J414TU , IRFB4227 , SSM6J507NU , SSM6J512NU , SSM6J771G , SSM6K217FE , SSM6K504NU , SSM6K781G , SSM6N55NU , SSM6N56FE .

History: AFN2014 | FQB19N20CTM

Keywords - SSM6J505NU MOSFET datasheet

 SSM6J505NU cross reference
 SSM6J505NU equivalent finder
 SSM6J505NU lookup
 SSM6J505NU substitution
 SSM6J505NU replacement

 

 
Back to Top

 


 
.