SSM6J507NU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM6J507NU
Código: SP7
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 13.6 nC
Conductancia de drenaje-sustrato (Cd): 210 pF
Resistencia entre drenaje y fuente RDS(on): 0.02 Ohm
Paquete / Cubierta: UDFN6B
Búsqueda de reemplazo de MOSFET SSM6J507NU
SSM6J507NU Datasheet (PDF)
ssm6j507nu.pdf
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SSM6J507NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J507NUSSM6J507NUSSM6J507NUSSM6J507NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 20 m (max) (@VGS = -10 V) RDS(ON) = 28 m (max) (@VGS = -4.5
ssm6j503nu.pdf
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SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J503NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON)= 89.6 m (max) (@VGS = -1.5 V) RDS(ON) = 57.9 m (max) (@VGS = -1.8 V) RDS(ON) = 41.7 m (max) (@VGS = -2.5 V) RDS(ON) = 32.4 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C
ssm6j502nu.pdf
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SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J502NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 60.5 m (max) (@VGS = -1.5 V) RDS(ON) = 38.4 m (max) (@VGS = -1.8 V) RDS(ON) = 28.3 m (max) (@VGS = -2.5 V) RDS(ON) = 23.1 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C
ssm6j50tu.pdf
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SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J50TU High Current Switching Applications Unit: mm Compact package suitable for high-density mounting Low on-resistance: Ron = 205m (max) (@VGS = -2.0 V) Ron = 100m (max) (@VGS = -2.5 V) Ron = 64m (max) (@VGS = -4.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Ra
ssm6j501nu.pdf
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SSM6J501NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J501NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 43.0 m (max) (@VGS = -1.5 V) RDS(ON) = 26.5 m (max) (@VGS = -1.8 V) RDS(ON) = 19.0 m (max) (@VGS = -2.5 V) RDS(ON) = 15.3 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C
ssm6j505nu.pdf
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SSM6J505NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J505NUSSM6J505NUSSM6J505NUSSM6J505NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.2 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 61 m (max) (@VGS = -1.2 V) RDS(ON) = 30 m (max) (@VGS = -
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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