SSM6J507NU Datasheet and Replacement

SSM6J507NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J507NUSSM6J507NUSSM6J507NUSSM6J507NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 20 m (max) (@VGS = -10 V) RDS(ON) = 28 m (max) (@VGS = -4.5

SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J503NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON)= 89.6 m (max) (@VGS = -1.5 V) RDS(ON) = 57.9 m (max) (@VGS = -1.8 V) RDS(ON) = 41.7 m (max) (@VGS = -2.5 V) RDS(ON) = 32.4 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C

SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J502NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 60.5 m (max) (@VGS = -1.5 V) RDS(ON) = 38.4 m (max) (@VGS = -1.8 V) RDS(ON) = 28.3 m (max) (@VGS = -2.5 V) RDS(ON) = 23.1 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C

SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J50TU High Current Switching Applications Unit: mm Compact package suitable for high-density mounting Low on-resistance: Ron = 205m (max) (@VGS = -2.0 V) Ron = 100m (max) (@VGS = -2.5 V) Ron = 64m (max) (@VGS = -4.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Ra

SSM6J501NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J501NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 43.0 m (max) (@VGS = -1.5 V) RDS(ON) = 26.5 m (max) (@VGS = -1.8 V) RDS(ON) = 19.0 m (max) (@VGS = -2.5 V) RDS(ON) = 15.3 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C

SSM6J505NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J505NUSSM6J505NUSSM6J505NUSSM6J505NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.2 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 61 m (max) (@VGS = -1.2 V) RDS(ON) = 30 m (max) (@VGS = -