SSM6N55NU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM6N55NU  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 53 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm

Encapsulados: UDFN6

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SSM6N55NU datasheet

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SSM6N55NU

SSM6N55NU MOSFETs Silicon N-Channel MOS SSM6N55NU SSM6N55NU SSM6N55NU SSM6N55NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 4.5V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 46 m (max) (@VGS = 10 V) RDS(ON) = 64 m (max) (@VGS

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SSM6N55NU

SSM6N56FE MOSFETs Silicon N-Channel MOS SSM6N56FE SSM6N56FE SSM6N56FE SSM6N56FE 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 235 m (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 m (max) (@VGS = 2.5 V, I

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SSM6N55NU

SSM6N58NU MOSFETs Silicon N-Channel MOS SSM6N58NU SSM6N58NU SSM6N58NU SSM6N58NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 84 m (max) (@VGS = 4.5 V) RDS(ON) = 117 m (max) (@V

 8.3. Size:229K  toshiba
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SSM6N55NU

SSM6N57NU MOSFETs Silicon N-Channel MOS SSM6N57NU SSM6N57NU SSM6N57NU SSM6N57NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 39.1 m (max) (@VGS = 4.5 V) RDS(ON) = 53 m (max) (@

MOSTRAR MÁS

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