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SSM6N56FE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM6N56FE
   Código: NZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 1 nC
   Cossⓘ - Capacitancia de salida: 16 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.84 Ohm
   Paquete / Cubierta: ES6
     - Selección de transistores por parámetros

 

SSM6N56FE Datasheet (PDF)

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SSM6N56FE

SSM6N56FEMOSFETs Silicon N-Channel MOSSSM6N56FESSM6N56FESSM6N56FESSM6N56FE1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 m (max) (@VGS = 2.5 V, I

 8.1. Size:235K  toshiba
 ssm6n55nu.pdf pdf_icon

SSM6N56FE

SSM6N55NUMOSFETs Silicon N-Channel MOSSSM6N55NUSSM6N55NUSSM6N55NUSSM6N55NU1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 4.5V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 46 m (max) (@VGS = 10 V) RDS(ON) = 64 m (max) (@VGS

 8.2. Size:229K  toshiba
 ssm6n58nu.pdf pdf_icon

SSM6N56FE

SSM6N58NUMOSFETs Silicon N-Channel MOSSSM6N58NUSSM6N58NUSSM6N58NUSSM6N58NU1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 84 m (max) (@VGS = 4.5 V) RDS(ON) = 117 m (max) (@V

 8.3. Size:229K  toshiba
 ssm6n57nu.pdf pdf_icon

SSM6N56FE

SSM6N57NUMOSFETs Silicon N-Channel MOSSSM6N57NUSSM6N57NUSSM6N57NUSSM6N57NU1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 39.1 m (max) (@VGS = 4.5 V) RDS(ON) = 53 m (max) (@

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: DMN3016LPS-13 | AON3806 | FQP10N20C | SSG4394N | HUF75623P3 | STS4DPF30L

 

 
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