All MOSFET. SSM6N56FE Datasheet

 

SSM6N56FE Datasheet and Replacement


   Type Designator: SSM6N56FE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.84 Ohm
   Package: ES6
 

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SSM6N56FE Datasheet (PDF)

 ..1. Size:199K  toshiba
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SSM6N56FE

SSM6N56FEMOSFETs Silicon N-Channel MOSSSM6N56FESSM6N56FESSM6N56FESSM6N56FE1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 m (max) (@VGS = 2.5 V, I

 8.1. Size:235K  toshiba
 ssm6n55nu.pdf pdf_icon

SSM6N56FE

SSM6N55NUMOSFETs Silicon N-Channel MOSSSM6N55NUSSM6N55NUSSM6N55NUSSM6N55NU1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 4.5V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 46 m (max) (@VGS = 10 V) RDS(ON) = 64 m (max) (@VGS

 8.2. Size:229K  toshiba
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SSM6N56FE

SSM6N58NUMOSFETs Silicon N-Channel MOSSSM6N58NUSSM6N58NUSSM6N58NUSSM6N58NU1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 84 m (max) (@VGS = 4.5 V) RDS(ON) = 117 m (max) (@V

 8.3. Size:229K  toshiba
 ssm6n57nu.pdf pdf_icon

SSM6N56FE

SSM6N57NUMOSFETs Silicon N-Channel MOSSSM6N57NUSSM6N57NUSSM6N57NUSSM6N57NU1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 39.1 m (max) (@VGS = 4.5 V) RDS(ON) = 53 m (max) (@

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Datasheet: SSM6J505NU , SSM6J507NU , SSM6J512NU , SSM6J771G , SSM6K217FE , SSM6K504NU , SSM6K781G , SSM6N55NU , 2SK3878 , SSM6N57NU , SSM6N58NU , SSM6N7002CFU , SSM6N7002KFU , SSM7002DGU , SSM7002EGU , SSM7002KGEN , SSM70T03GH .

History: SSM6N7002KFU | PHB160NQ08T

Keywords - SSM6N56FE MOSFET datasheet

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