SSM6N7002KFU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM6N7002KFU
Código: NN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.285 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 0.3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.1 V
Carga de la puerta (Qg): 0.39 nC
Tiempo de subida (tr): 3.6 nS
Conductancia de drenaje-sustrato (Cd): 5.5 pF
Resistencia entre drenaje y fuente RDS(on): 1.5 Ohm
Paquete / Cubierta: US6
Búsqueda de reemplazo de MOSFET SSM6N7002KFU
SSM6N7002KFU Datasheet (PDF)
ssm6n7002kfu.pdf
SSM6N7002KFUMOSFETs Silicon N-Channel MOS (U-MOS-H)SSM6N7002KFUSSM6N7002KFUSSM6N7002KFUSSM6N7002KFU1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) ESD(HBM) level 2 kV(2) Low drain-source on-resistance: RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS
ssm6n7002cfu.pdf
SSM6N7002CFUMOSFETs Silicon N-Channel MOSSSM6N7002CFUSSM6N7002CFUSSM6N7002CFUSSM6N7002CFU1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) Gate-Source diode for protection(2) Low drain-source on-resistance: RDS(ON) = 2.8 (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 (t
ssm6n7002fu.pdf
SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol
ssm6n7002bfu.pdf
SSM6N7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM6N7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm2.10.1 Small package1.250.1 Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 (max) (@VGS = 5 V) 16: RDS(ON) = 2.1 (max) (@VGS = 10 V) 2 5Absolute Maximum Ratings
ssm6n7002bfe.pdf
SSM6N7002BFE TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM6N7002BFE High-Speed Switching Applications Analog Switch Applications Unit: mm1.60.051.20.05 Small package Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 (max) (@VGS = 5 V) 1 6: RDS(ON) = 2.1 (max) (@VGS = 10 V) 25Absolute Maximum Rating
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