SSM6N7002KFU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM6N7002KFU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.285 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.6 nS
Cossⓘ - Capacitancia de salida: 5.5 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Paquete / Cubierta: US6
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SSM6N7002KFU Datasheet (PDF)
ssm6n7002kfu.pdf

SSM6N7002KFUMOSFETs Silicon N-Channel MOS (U-MOS-H)SSM6N7002KFUSSM6N7002KFUSSM6N7002KFUSSM6N7002KFU1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) ESD(HBM) level 2 kV(2) Low drain-source on-resistance: RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS
ssm6n7002cfu.pdf

SSM6N7002CFUMOSFETs Silicon N-Channel MOSSSM6N7002CFUSSM6N7002CFUSSM6N7002CFUSSM6N7002CFU1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) Gate-Source diode for protection(2) Low drain-source on-resistance: RDS(ON) = 2.8 (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 (t
ssm6n7002fu.pdf

SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol
ssm6n7002bfu.pdf

SSM6N7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM6N7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm2.10.1 Small package1.250.1 Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 (max) (@VGS = 5 V) 16: RDS(ON) = 2.1 (max) (@VGS = 10 V) 2 5Absolute Maximum Ratings
Otros transistores... SSM6K217FE , SSM6K504NU , SSM6K781G , SSM6N55NU , SSM6N56FE , SSM6N57NU , SSM6N58NU , SSM6N7002CFU , K3569 , SSM7002DGU , SSM7002EGU , SSM7002KGEN , SSM70T03GH , SSM70T03GJ , SSM72T02GH , SSM75T10GP , SSM75T10GS .
History: STU13NM60N | DMP22M2UPS-13 | YWNM6001 | IRFS241 | SQJ148EP | SMG2343P
History: STU13NM60N | DMP22M2UPS-13 | YWNM6001 | IRFS241 | SQJ148EP | SMG2343P



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