SSM6N7002KFU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM6N7002KFU 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.285 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.6 nS
Cossⓘ - Capacitancia de salida: 5.5 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Encapsulados: US6
📄📄 Copiar
Búsqueda de reemplazo de SSM6N7002KFU MOSFET
- Selecciónⓘ de transistores por parámetros
SSM6N7002KFU datasheet
ssm6n7002kfu.pdf
SSM6N7002KFU MOSFETs Silicon N-Channel MOS (U-MOS -H) SSM6N7002KFU SSM6N7002KFU SSM6N7002KFU SSM6N7002KFU 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS
ssm6n7002cfu.pdf
SSM6N7002CFU MOSFETs Silicon N-Channel MOS SSM6N7002CFU SSM6N7002CFU SSM6N7002CFU SSM6N7002CFU 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) Gate-Source diode for protection (2) Low drain-source on-resistance RDS(ON) = 2.8 (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 (t
ssm6n7002fu.pdf
SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 3.3 (max) (@VGS = 4.5 V) Ron = 3.2 (max) (@VGS = 5 V) Ron = 3.0 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol
ssm6n7002bfu.pdf
SSM6N7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS ) SSM6N7002BFU High-Speed Switching Applications Analog Switch Applications Unit mm 2.1 0.1 Small package 1.25 0.1 Low ON-resistance RDS(ON) = 3.3 (max) (@VGS = 4.5 V) RDS(ON) = 2.6 (max) (@VGS = 5 V) 1 6 RDS(ON) = 2.1 (max) (@VGS = 10 V) 2 5 Absolute Maximum Ratings
Otros transistores... SSM6K217FE, SSM6K504NU, SSM6K781G, SSM6N55NU, SSM6N56FE, SSM6N57NU, SSM6N58NU, SSM6N7002CFU, IRF9540, SSM7002DGU, SSM7002EGU, SSM7002KGEN, SSM70T03GH, SSM70T03GJ, SSM72T02GH, SSM75T10GP, SSM75T10GS
History: UPA2722UT1A | IXTQ200N075T | SVS5N65FD2 | SSM6N58NU | IXTT72N10 | SVS5N65FJHD2 | IXTQ200N10T
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BCD70N07A | BCD90N03 | BCD80N06 | T50N06 | H50N06 | BCD12N65 | BCT12N65 | BCD4N65 | BCT4N65 | BCD7N65 | BCT7N65 | BCT20N65 | ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q
Popular searches
irf640 | irf840 | irf740 | c945 transistor | irf640n | 2n3904 | bc547 datasheet | k3797 mosfet
