SSM9435K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM9435K
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 222 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de SSM9435K MOSFET
SSM9435K PDF Specs
ssm9435k.pdf
SSM9435K P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BV -30V DSS D Low on-resistance R 50m DS(ON) S Fast switching ID -6A D G SOT-223 Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G low on-resistance and cost-effectiveness. S Absolute Maximum Ratings Symbol Parameter Ratin... See More ⇒
ssm9435gm.pdf
SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9435GM acheives fast switching performance BVDSS -30V with low gate charge without a complex drive circuit. It RDS(ON) 50m is suitable for low voltage applications such as battery management and general high-side switch circuits. I -5.3A D The SSM9435GM is supplied in an RoHS-compliant Pb-free; ... See More ⇒
ssm9435gh ssm9435gj.pdf
SSM9435GH,J P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -30V D Simple drive requirement R 50m DS(ON) Fast switching ID -20A G Pb-free; RoHS compliant. S DESCRIPTION G The SSM9435H is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC ... See More ⇒
ssm9435gm.pdf
SSM9435GM www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top... See More ⇒
Otros transistores... SSM90T03GP , SSM90T03GS , SSM9406GM , SSM9408GH , SSM9410GM , SSM9435GH , SSM9435GJ , SSM9435GM , CS150N03A8 , SSM9475M , SSM9477M , SSM9510GM , SSM9563M , SSM9564GM , SSM9567GM , SSM9575M , SSM9585GM .
Liste
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