SSM9435K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM9435K
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 222 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: SOT-223

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SSM9435K Datasheet (PDF)

..1. Size:200K silicon standard
ssm9435k.pdf

SSM9435KP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV -30VDSSDLow on-resistance R 50mDS(ON)SFast switching ID -6ADGSOT-223DescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G low on-resistance and cost-effectiveness.SAbsolute Maximum RatingsSymbol Parameter Ratin

7.1. Size:522K silicon standard
ssm9435gm.pdf

SSM9435GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9435GM acheives fast switching performanceBVDSS -30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 50mis suitable for low voltage applications such as batterymanagement and general high-side switch circuits.I -5.3AD The SSM9435GM is supplied in an RoHS-compliantPb-free;

7.2. Size:293K silicon standard
ssm9435gh ssm9435gj.pdf

SSM9435GH,JP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -30VDSimple drive requirement R 50mDS(ON)Fast switching ID -20AGPb-free; RoHS compliant.SDESCRIPTIONGThe SSM9435H is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC

7.3. Size:842K cn vbsemi
ssm9435gm.pdf

SSM9435GMwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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