SSM9918GJ Todos los transistores

 

SSM9918GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM9918GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 83 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TO-251
     - Selección de transistores por parámetros

 

SSM9918GJ Datasheet (PDF)

 ..1. Size:301K  silicon standard
 ssm9918gh ssm9918gj.pdf pdf_icon

SSM9918GJ

SSM9918H,JN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETLow on-resistance BV 20VDSSDCapable of 2.5V gate drive R 14mDS(ON)Low drive current I 45ADGSurface mount packageSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectivene

 8.1. Size:300K  silicon standard
 ssm9915gh ssm9915gj.pdf pdf_icon

SSM9918GJ

SSM9915H,JN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETLow on-resistance BV 20VD DSSCapable of 2.5V gate drive R 50mDS(ON)Low drive current I 20ADGSimple drive requirementSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effective

 8.2. Size:206K  silicon standard
 ssm9915k.pdf pdf_icon

SSM9918GJ

SSM9915KN-CHANNEL ENHANCEMENT MODE POWER MOSFETSimple drive requirement BVDSS 20VDLower gate charge RDS(ON) 50mFast switching characteristic ID 6.2ASDSOT-223GDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G low on-resistance and cost-effectiveness.SAbsolute Maximum RatingsSymbol Para

 8.3. Size:297K  silicon standard
 ssm9916gh ssm9916gj.pdf pdf_icon

SSM9918GJ

SSM9916H,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BV 18VD DSSCapable of 2.5V gate drive RDS(ON) 25mLow drive current ID 35AGSimple drive requirementSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectiveness

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCEP11N10AK | BSS84KR

 

 
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