SSM9926GEO Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM9926GEO  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: TSSOP-8

  📄📄 Copiar 

 Búsqueda de reemplazo de SSM9926GEO MOSFET

- Selecciónⓘ de transistores por parámetros

 

SSM9926GEO datasheet

 ..1. Size:146K  silicon standard
 ssm9926geo.pdf pdf_icon

SSM9926GEO

SSM9926GEO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS G2 Low on-resistance BV 20V DSS S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 28m G1 S1 Low drive current S1 I 4.6A D TSSOP-8 D1 Surface-mount package Description D1 D2 Power MOSFETs from Silicon Standard provide the G1 G2 designer with the best combination of fast switching, ruggedized device design, ultra low on-resista

 6.1. Size:560K  silicon standard
 ssm9926gm.pdf pdf_icon

SSM9926GEO

SSM9926GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM9926GM acheives fast switching performance BVDSS 20V with low gate charge without a complex drive circuit. It RDS(ON) 30m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 6A D The SSM9926GM is supplied in an RoHS-compliant Pb-free; Ro

 7.1. Size:264K  silicon standard
 ssm9926o.pdf pdf_icon

SSM9926GEO

SSM9926O N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Low drive current S1 S2 Surface mount package DESCRIPTION BVDSS 20V RDS(ON) 28m The Advanced Power MOSFETs from Silicon Standard Corp. ID 4.6A provide the designer with the best combination of fast switching, ruggedized device design, ultra l

 7.2. Size:242K  silicon standard
 ssm9926tgo.pdf pdf_icon

SSM9926GEO

SSM9926TGO N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Surface mount package S1 S2 DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast switching, RDS(ON) 32m ruggedized device design, ultra low on-resistance and ID 4.

MOSTRAR MÁS

Otros transistores... SSM9915GJ, SSM9915K, SSM9916GH, SSM9916GJ, SSM9918GH, SSM9918GJ, SSM9922GEO, SSM9926EM, 8N60, SSM9926GM, SSM9926O, SSM9926TGO, SSM9928GEO, SSM9928O, SSM9930M, SSM9934GM, SSM9960GH