SSM9926GEO Datasheet. Specs and Replacement
Type Designator: SSM9926GEO 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TSSOP-8
SSM9926GEO substitution
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SSM9926GEO datasheet
ssm9926geo.pdf
SSM9926GEO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS G2 Low on-resistance BV 20V DSS S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 28m G1 S1 Low drive current S1 I 4.6A D TSSOP-8 D1 Surface-mount package Description D1 D2 Power MOSFETs from Silicon Standard provide the G1 G2 designer with the best combination of fast switching, ruggedized device design, ultra low on-resista... See More ⇒
ssm9926gm.pdf
SSM9926GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM9926GM acheives fast switching performance BVDSS 20V with low gate charge without a complex drive circuit. It RDS(ON) 30m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 6A D The SSM9926GM is supplied in an RoHS-compliant Pb-free; Ro... See More ⇒
ssm9926o.pdf
SSM9926O N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Low drive current S1 S2 Surface mount package DESCRIPTION BVDSS 20V RDS(ON) 28m The Advanced Power MOSFETs from Silicon Standard Corp. ID 4.6A provide the designer with the best combination of fast switching, ruggedized device design, ultra l... See More ⇒
ssm9926tgo.pdf
SSM9926TGO N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Surface mount package S1 S2 DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast switching, RDS(ON) 32m ruggedized device design, ultra low on-resistance and ID 4.... See More ⇒
Detailed specifications: SSM9915GJ, SSM9915K, SSM9916GH, SSM9916GJ, SSM9918GH, SSM9918GJ, SSM9922GEO, SSM9926EM, 8N60, SSM9926GM, SSM9926O, SSM9926TGO, SSM9928GEO, SSM9928O, SSM9930M, SSM9934GM, SSM9960GH
Keywords - SSM9926GEO MOSFET specs
SSM9926GEO cross reference
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